JANS2N6193
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- Mfr.Part #
- JANS2N6193
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS PNP 100V 5A TO39
- Stock
- 31,972
- In Stock ：
- 31,972
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 100V
- Current - Collector Cutoff (Max) :
- 100μA
- Max Power Dissipation :
- 1W
- Operating Temperature :
- -65°C~200°C TJ
- Emitter Base Voltage (VEBO) :
- 6V
- Terminal Position :
- BOTTOM
- Packaging :
- Bulk
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Series :
- Military, MIL-PRF-19500/561
- Collector Base Voltage (VCBO) :
- 100V
- Power Dissipation :
- 1W
- Mount :
- Through Hole
- Max Collector Current :
- 5A
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- JESD-609 Code :
- e0
- Radiation Hardening :
- No
- Terminal Form :
- Wire
- RoHS Status :
- Non-RoHS Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JEDEC-95 Code :
- TO-5
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 1.2V @ 500mA, 5A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 2A 2V
- Transistor Type :
- PNP
- Reference Standard :
- MILITARY STANDARD (USA)
- Number of Pins :
- 3
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Qualification Status :
- Qualified
- Pin Count :
- 3
- Datasheets
- JANS2N6193
PNP -65°C~200°C TJ 100μA 1 Elements 3 Terminations SILICON TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JANS2N6193 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 60 @ 2A 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.2V @ 500mA, 5A.The emitter base voltage can be kept at 6V for high efficiency.Single BJT transistor is possible to have a collector current as low as 5A volts at Single BJT transistors maximum.
JANS2N6193 Features
the DC current gain for this device is 60 @ 2A 2V
the vce saturation(Max) is 1.2V @ 500mA, 5A
the emitter base voltage is kept at 6V
JANS2N6193 Applications
There are a lot of Microsemi Corporation
JANS2N6193 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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