JANS2N5666S

Manufacturer :

Microchip Technology

Product Category :

Transistors - Bipolar (BJT) - Single

Reference Standard :

MIL-19500/455

DC Current Gain-Min (hFE) :

40

Polarity/Channel Type :

NPN

Brand :

Microchip / Microsemi

Package Shape :

Round

Base Product Number :

2N5666

Frequency - Transition :

-

Vce Saturation (Max) @ Ib, Ic :

1V @ 1A, 5A

Product Type :

BJTs - Bipolar Transistors

Configuration :

Single

JESD-30 Code :

O-MBCY-W3

Series :

Military, MIL-PRF-19500/455

RoHS :

N

Factory Lead Time :

34 Weeks

Qualification Status :

Qualified

Product Category :

Bipolar Transistors - BJT

Power - Max :

1.2 W

Number of Terminals :

3

Package :

Bulk

ECCN Code :

EAR99

Collector Current-Max (IC) :

5 A

Packaging :

Bulk

Supplier Device Package :

TO-39 (TO-205AD)

Transistor Type :

NPN

Current - Collector Cutoff (Max) :

200nA

Surface Mount :

No

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Case Connection :

COLLECTOR

Operating Temperature :

-65°C ~ 200°C (TJ)

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 1A, 5V

Voltage - Collector Emitter Breakdown (Max) :

200 V

Transistor Application :

SWITCHING

Package / Case :

TO-205AD, TO-39-3 Metal Can

Terminal Position :

BOTTOM

Subcategory :

Transistors

Product Status :

Active

Transistor Element Material :

SILICON

Reach Compliance Code :

Compliant

Technology :

Si

Number of Elements :

1

Terminal Form :

Wire

Current - Collector (Ic) (Max) :

5 A

Mounting Type :

Through Hole

Collector-Emitter Voltage-Max :

200 V