JANS2N3735
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- Mfr.Part #
- JANS2N3735
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 40V 1.5A TO39
- Stock
- 15,040
- In Stock ：
- 15,040
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Supplier Device Package :
- TO-5
- Brand :
- Microchip / Microsemi
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Product Status :
- Active
- Product Type :
- BJTs - Bipolar Transistors
- Transistor Type :
- NPN
- Series :
- Military, MIL-PRF-19500/395
- Current - Collector Cutoff (Max) :
- 200nA
- Vce Saturation (Max) @ Ib, Ic :
- 900mV @ 100mA, 1A
- Packaging :
- Bulk
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Package :
- Bulk
- Manufacturer :
- Microchip
- Frequency - Transition :
- -
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 500mA, 1V
- Mounting Type :
- Through Hole
- Voltage - Collector Emitter Breakdown (Max) :
- 40 V
- Subcategory :
- Transistors
- Current - Collector (Ic) (Max) :
- 1.5 A
- Technology :
- Si
- Product Category :
- Bipolar Transistors - BJT
- Power - Max :
- 1 W
- RoHS :
- N
- Datasheets
- JANS2N3735
NPN -65°C ~ 200°C (TJ) 200nA TO-205AA, TO-5-3 Metal Can Bulk Through Hole
JANS2N3735L Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 500mA, 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 900mV @ 100mA, 1A.This product comes in a TO-5 device package from the supplier.Device displays Collector Emitter Breakdown (40 V maximal voltage).
JANS2N3735L Features
the DC current gain for this device is 40 @ 500mA, 1V
the vce saturation(Max) is 900mV @ 100mA, 1A
the supplier device package of TO-5
JANS2N3735L Applications
There are a lot of Microchip Technology
JANS2N3735L applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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