JANS2N3637UB/TR
- Mfr.Part #
- JANS2N3637UB/TR
- Manufacturer
- Microchip Technology
- Package / Case
- 3-SMD, No Lead
- Datasheet
- Download
- Description
- TRANS PNP 175V 1A UB
- Stock
- 17,704
- In Stock :
- 17,704
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Subcategory :
- Transistors
- Current - Collector (Ic) (Max) :
- 1 A
- Mounting Type :
- Surface Mount
- Power - Max :
- 1.5 W
- Max Collector Current :
- 1 A
- Number of Pins :
- 3
- Transistor Polarity :
- PNP
- Frequency - Transition :
- -
- Voltage - Collector Emitter Breakdown (Max) :
- 175 V
- Max Operating Temperature :
- 200 °C
- Product Status :
- Active
- Maximum Operating Temperature :
- + 200 C
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Technology :
- Si
- Product Category :
- Bipolar Transistors - BJT
- Current - Collector Cutoff (Max) :
- 10μA
- Product Type :
- BJTs - Bipolar Transistors
- Max Power Dissipation :
- 1 W
- Package / Case :
- 3-SMD, No Lead
- Min Operating Temperature :
- -65 °C
- Manufacturer :
- Microchip
- Mounting Style :
- SMD/SMT
- Transistor Type :
- PNP
- Package :
- Tape and Reel (TR)
- Brand :
- Microchip / Microsemi
- Collector Emitter Voltage (VCEO) :
- 175 V
- Configuration :
- Single
- RoHS :
- Non-Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 50mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 50mA, 10V
- Minimum Operating Temperature :
- - 65 C
- Supplier Device Package :
- UB
- Series :
- Military, MIL-PRF-19500/357
- Mount :
- Through Hole
- Datasheets
- JANS2N3637UB/TR

PNP -65°C ~ 200°C (TJ) 10μA 3-SMD, No Lead Surface Mount
JANS2N3637UB/TR Overview
DC current gain in this device equals 100 @ 50mA, 10V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 600mV @ 5mA, 50mA.Product comes in UB supplier package.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.In extreme cases, the collector current can be as low as 1 A volts.
JANS2N3637UB/TR Features
the DC current gain for this device is 100 @ 50mA, 10V
the vce saturation(Max) is 600mV @ 5mA, 50mA
the supplier device package of UB
JANS2N3637UB/TR Applications
There are a lot of Microchip Technology
JANS2N3637UB/TR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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