JANS2N3637UB

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Mfr.Part #
JANS2N3637UB
Manufacturer
Microchip Technology
Package / Case
3-SMD, No Lead
Datasheet
Download
Description
TRANS PNP 175V 1A UB
Stock
31,634
In Stock :
31,634

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Manufacturer :
Microchip Technology
Product Category :
Transistors - Bipolar (BJT) - Single
Series :
Military, MIL-PRF-19500/357
Packaging :
Bulk
JESD-609 Code :
e0
Number of Pins :
3
Collector Emitter Voltage (VCEO) :
175V
Current - Collector Cutoff (Max) :
10μA
RoHS Status :
Non-RoHS Compliant
Terminal Finish :
Tin/Lead (Sn/Pb)
Mount :
Surface Mount
Transistor Type :
PNP
ECCN Code :
EAR99
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mounting Type :
Surface Mount
Operating Temperature :
-65°C~200°C TJ
Number of Terminations :
3
Configuration :
Single
Power - Max :
1.5W
Radiation Hardening :
No
Pbfree Code :
No
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 50mA 10V
HTS Code :
8541.29.00.95
Collector Base Voltage (VCBO) :
175V
Transistor Element Material :
SILICON
Vce Saturation (Max) @ Ib, Ic :
600mV @ 5mA, 50mA
Polarity/Channel Type :
PNP
Turn On Time-Max (ton) :
200ns
Turn Off Time-Max (toff) :
650ns
Terminal Position :
Dual
Package / Case :
3-SMD, No Lead
Max Power Dissipation :
1W
Transistor Application :
SWITCHING
Max Collector Current :
1A
Lifecycle Status :
IN PRODUCTION (Last Updated: 1 month ago)
Qualification Status :
Qualified
Number of Elements :
1
Pin Count :
3
Datasheets
JANS2N3637UB
Introducing Transistors - Bipolar (BJT) - Single Microchip Technology JANS2N3637UB from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Mounting Type:Surface Mount, Operating Temperature:-65°C~200°C TJ, Number of Terminations:3, Package / Case:3-SMD, No Lead, JANS2N3637UB pinout, JANS2N3637UB datasheet PDF, JANS2N3637UB amp .Beyond Transistors - Bipolar (BJT) - Single Microchip Technology JANS2N3637UB ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.



PNP -65°C~200°C TJ 10μA 1 Elements 3 Terminations SILICON PNP 3-SMD, No Lead Bulk Surface Mount

JANS2N3637UB Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 50mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 50mA.During maximum operation, collector current can be as low as 1A volts.

JANS2N3637UB Features


the DC current gain for this device is 100 @ 50mA 10V
the vce saturation(Max) is 600mV @ 5mA, 50mA


JANS2N3637UB Applications


There are a lot of Microsemi Corporation
JANS2N3637UB applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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