JANS2N3637

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Mfr.Part #
JANS2N3637
Manufacturer
Microchip Technology
Package / Case
TO-205AD, TO-39-3 Metal Can
Datasheet
Download
Description
TRANS PNP 175V 1A TO39
Stock
445
In Stock :
445

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Manufacturer :
Microchip Technology
Product Category :
Transistors - Bipolar (BJT) - Single
Polarity/Channel Type :
PNP
Transistor Element Material :
SILICON
Factory Lead Time :
33 Weeks
Transistor Type :
PNP
Power - Max :
1W
Max Power Dissipation :
1W
Transistor Application :
AMPLIFIER
Number of Pins :
3
Terminal Form :
Wire
Terminal Position :
BOTTOM
Qualification Status :
Qualified
RoHS Status :
Non-RoHS Compliant
Published :
2007
Turn Off Time-Max (toff) :
650ns
Vce Saturation (Max) @ Ib, Ic :
600mV @ 5mA, 50mA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current - Collector Cutoff (Max) :
10μA
JESD-609 Code :
e0
Mount :
Through Hole
Radiation Hardening :
No
HTS Code :
8541.29.00.95
Turn On Time-Max (ton) :
200ns
Terminal Finish :
Tin/Lead (Sn/Pb)
Collector Emitter Voltage (VCEO) :
600mV
Pbfree Code :
No
Configuration :
Single
Packaging :
Bulk
Series :
Military, MIL-PRF-19500/357
Max Collector Current :
1A
Transition Frequency :
200MHz
Pin Count :
2
ECCN Code :
EAR99
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 50mA 10V
Operating Temperature :
-65°C~200°C TJ
Mounting Type :
Through Hole
Number of Elements :
1
Lifecycle Status :
IN PRODUCTION (Last Updated: 3 weeks ago)
Collector Emitter Breakdown Voltage :
175V
Collector Base Voltage (VCBO) :
175V
Package / Case :
TO-205AD, TO-39-3 Metal Can
Number of Terminations :
3
Datasheets
JANS2N3637
Introducing Transistors - Bipolar (BJT) - Single Microchip Technology JANS2N3637 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Operating Temperature:-65°C~200°C TJ, Mounting Type:Through Hole, Package / Case:TO-205AD, TO-39-3 Metal Can, Number of Terminations:3, JANS2N3637 pinout, JANS2N3637 datasheet PDF, JANS2N3637 amp .Beyond Transistors - Bipolar (BJT) - Single Microchip Technology JANS2N3637 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology JANS2N3637


PNP -65°C~200°C TJ 10μA 1 Elements 3 Terminations SILICON PNP TO-205AD, TO-39-3 Metal Can Bulk Through Hole

JANS2N3637 Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 50mA 10V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 5mA, 50mA.The part has a transition frequency of 200MHz.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.

JANS2N3637 Features


the DC current gain for this device is 100 @ 50mA 10V
the vce saturation(Max) is 600mV @ 5mA, 50mA
a transition frequency of 200MHz


JANS2N3637 Applications


There are a lot of Microsemi Corporation
JANS2N3637 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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