JANS2N3634L

Manufacturer :

Microchip Technology

Product Category :

Transistors - Bipolar (BJT) - Single

Maximum Base Emitter Saturation Voltage (V) :

0.8@1mA@10mA|0.9@5mA@50mA

Number of Elements per Chip :

1

Automotive :

No

Package Height :

6.6(Max)

ECCN (US) :

EAR99

Maximum Collector Base Voltage (V) :

140

Diameter :

9.4(Max)

Material :

Si

Maximum DC Collector Current (A) :

1

PCB changed :

3

Packaging :

Bag

Minimum DC Current Gain :

@10V|45@1mA@10V|50@10mA@10V|50@50mA@10V|30@150mA@10V

Configuration :

Single

Supplier Temperature Grade :

Military

Maximum Power Dissipation (mW) :

1000

Maximum Collector-Emitter Saturation Voltage (V) :

0.3@1mA@10mA|0.6@5mA@50mA

Lead Shape :

Through Hole

Maximum Operating Temperature (°C) :

200

Mounting :

Through Hole

Maximum Emitter Base Voltage (V) :

5

Pin Count :

3

EU RoHS :

Compliant

Supplier Package :

TO-5

Category :

Bipolar Power

Type :

PNP

Maximum Collector-Emitter Voltage (V) :

140

Minimum Operating Temperature (°C) :

-65

Standard Package Name :

TO-205-AA

PPAP :

No