JANS2N3507L

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Mfr.Part #
JANS2N3507L
Manufacturer
Microchip Technology
Package / Case
TO-205AA, TO-5-3 Metal Can
Datasheet
Download
Description
POWER BJT
Stock
29,415
In Stock :
29,415

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Manufacturer :
Microchip Technology
Product Category :
Transistors - Bipolar (BJT) - Single
DC Current Gain-Min (hFE) :
20
Power - Max :
1 W
Subcategory :
Other Transistors
Pin Count :
3
Series :
Military, MIL-PRF-19500/349
Manufacturer :
Microchip
Current - Collector (Ic) (Max) :
3 A
JESD-30 Code :
O-MBCY-W3
Factory Lead Time :
28 Weeks
Configuration :
Single
Package Shape :
Round
Product Category :
Microchip Technology
Reach Compliance Code :
Compliant
ECCN Code :
EAR99
DC Current Gain (hFE) (Min) @ Ic, Vce :
35 @ 500mA, 1V
Number of Terminals :
3
Mounting Type :
Through Hole
JEDEC-95 Code :
TO-5
Terminal Position :
BOTTOM
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 250mA, 2.5A
Reference Standard :
MIL-19500/349
HTS Code :
8541.29.00.95
Transistor Element Material :
SILICON
Power Dissipation-Max (Abs) :
1 W
Product Status :
Active
Qualification Status :
Qualified
Voltage - Collector Emitter Breakdown (Max) :
50 V
Transistor Application :
SWITCHING
Surface Mount :
No
Package :
Bulk
RoHS :
N
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Operating Temperature :
-65°C ~ 200°C (TJ)
Collector-Emitter Voltage-Max :
50 V
Polarity/Channel Type :
NPN
Current - Collector Cutoff (Max) :
1μA
Number of Elements :
1
Frequency - Transition :
-
Terminal Form :
Wire
Transistor Type :
NPN
Package / Case :
TO-205AA, TO-5-3 Metal Can
Supplier Device Package :
TO-5AA
Brand :
Microchip / Microsemi
Collector Current-Max (IC) :
3 A
Datasheets
JANS2N3507L
Introducing Transistors - Bipolar (BJT) - Single Microchip Technology JANS2N3507L from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:-65°C ~ 200°C (TJ), Package / Case:TO-205AA, TO-5-3 Metal Can, JANS2N3507L pinout, JANS2N3507L datasheet PDF, JANS2N3507L amp .Beyond Transistors - Bipolar (BJT) - Single Microchip Technology JANS2N3507L ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.



NPN -65°C ~ 200°C (TJ) 1μA 1 Elements SILICON NPN TO-205AA, TO-5-3 Metal Can Through Hole

JANS2N3507L Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 35 @ 500mA, 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 250mA, 2.5A.TO-5AA is the supplier device package for this product.In the 50 V setting, the maximum collector-emitter voltage is set.This device displays a 50 V maximum voltage - Collector Emitter Breakdown.

JANS2N3507L Features


the DC current gain for this device is 35 @ 500mA, 1V
the vce saturation(Max) is 1.5V @ 250mA, 2.5A
the supplier device package of TO-5AA


JANS2N3507L Applications


There are a lot of Microchip Technology
JANS2N3507L applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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