JANS2N3507A
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- Mfr.Part #
- JANS2N3507A
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- POWER BJT
- Stock
- 3,511
- In Stock ：
- 3,511
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Supplier Device Package :
- TO-5AA
- Mounting Type :
- Through Hole
- Product Status :
- Active
- RoHS :
- N
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 250mA, 2.5A
- Brand :
- Microchip / Microsemi
- Frequency - Transition :
- -
- Manufacturer :
- Microchip
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Power - Max :
- 1 W
- Series :
- Military, MIL-PRF-19500/349
- Product Category :
- Microchip Technology
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Current - Collector (Ic) (Max) :
- 3 A
- Voltage - Collector Emitter Breakdown (Max) :
- 50 V
- Package :
- Bulk
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 35 @ 500mA, 1V
- Transistor Type :
- NPN
- Current - Collector Cutoff (Max) :
- 1μA
- Datasheets
- JANS2N3507A
NPN -65°C ~ 200°C (TJ) 1μA TO-205AA, TO-5-3 Metal Can Through Hole
JANS2N3507AL Overview
In this device, the DC current gain is 35 @ 500mA, 1V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 250mA, 2.5A.Product comes in the supplier's device package TO-5AA.There is a 50 V maximal voltage in the device due to collector-emitter breakdown.
JANS2N3507AL Features
the DC current gain for this device is 35 @ 500mA, 1V
the vce saturation(Max) is 1.5V @ 250mA, 2.5A
the supplier device package of TO-5AA
JANS2N3507AL Applications
There are a lot of Microchip Technology
JANS2N3507AL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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