JANS2N3499L
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- Mfr.Part #
- JANS2N3499L
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 100V 0.5A TO5
- Stock
- 34,756
- In Stock ：
- 34,756
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Series :
- Military, MIL-PRF-19500/366
- Max Collector Current :
- 500mA
- Radiation Hardening :
- No
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Power Dissipation :
- 1W
- Current - Collector (Ic) (Max) :
- 500mA
- Number of Pins :
- 3
- Collector Base Voltage (VCBO) :
- 100V
- Min Operating Temperature :
- -65°C
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 30mA, 300mA
- RoHS Status :
- Non-RoHS Compliant
- Published :
- 2007
- Emitter Base Voltage (VEBO) :
- 6V
- Factory Lead Time :
- 33 Weeks
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 100V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Max Operating Temperature :
- 200°C
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Polarity :
- NPN
- Mounting Type :
- Through Hole
- Supplier Device Package :
- TO-5
- Packaging :
- Bulk
- Max Power Dissipation :
- 1W
- Mount :
- Through Hole
- Voltage - Collector Emitter Breakdown (Max) :
- 100V
- Operating Temperature :
- -65°C~200°C TJ
- Transistor Type :
- NPN
- Datasheets
- JANS2N3499L
NPN -65°C~200°C TJ 10μA ICBO 1 Elements TO-205AA, TO-5-3 Metal Can Bulk Through Hole
JANS2N3499L Overview
In this device, the DC current gain is 100 @ 150mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 30mA, 300mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.Product comes in the supplier's device package TO-5.There is a 100V maximal voltage in the device due to collector-emitter breakdown.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
JANS2N3499L Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 600mV @ 30mA, 300mA
the emitter base voltage is kept at 6V
the supplier device package of TO-5
JANS2N3499L Applications
There are a lot of Microsemi Corporation
JANS2N3499L applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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