JANS2N3439
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- Mfr.Part #
- JANS2N3439
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 350V 1A TO39
- Stock
- 32,361
- In Stock ：
- 32,361
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- HTS Code :
- 8541.21.00.95
- Max Collector Current :
- 1A
- JESD-609 Code :
- e0
- Collector Emitter Voltage (VCEO) :
- 350V
- Mount :
- Through Hole
- Published :
- 2007
- Transistor Element Material :
- SILICON
- Mounting Type :
- Through Hole
- Terminal Position :
- BOTTOM
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Terminal Form :
- Wire
- Turn On Time-Max (ton) :
- 1000ns
- Collector Base Voltage (VCBO) :
- 450V
- Number of Pins :
- 3
- JEDEC-95 Code :
- TO-5
- Packaging :
- Bulk
- Qualification Status :
- Qualified
- Max Power Dissipation :
- 800mW
- RoHS Status :
- Non-RoHS Compliant
- Case Connection :
- COLLECTOR
- Current - Collector Cutoff (Max) :
- 2µA
- Current - Collector (Ic) (Max) :
- 1A
- Polarity/Channel Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 20mA 10V
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Pbfree Code :
- No
- Radiation Hardening :
- No
- Series :
- Military, MIL-PRF-19500/368
- Transistor Type :
- NPN
- Contact Plating :
- Lead, Tin
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Operating Temperature :
- -65°C~200°C TJ
- Turn Off Time-Max (toff) :
- 10000ns
- Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 4mA, 50mA
- Datasheets
- JANS2N3439
NPN -65°C~200°C TJ 2μA 1 Elements 3 Terminations SILICON NPN TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JANS2N3439 Overview
In this device, the DC current gain is 40 @ 20mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 4mA, 50mA.Maximum collector currents can be below 1A volts.
JANS2N3439 Features
the DC current gain for this device is 40 @ 20mA 10V
the vce saturation(Max) is 500mV @ 4mA, 50mA
JANS2N3439 Applications
There are a lot of Microsemi Corporation
JANS2N3439 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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