JANS2N2369AUB
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- Mfr.Part #
- JANS2N2369AUB
- Manufacturer
- Microchip Technology
- Package / Case
- 3-SMD, No Lead
- Datasheet
- Download
- Description
- TRANS NPN 20V UB
- Stock
- 11,122
- In Stock ：
- 11,122
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Published :
- 2007
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Collector Base Voltage (VCBO) :
- 40V
- Collector Emitter Voltage (VCEO) :
- 15V
- Packaging :
- Bulk
- HTS Code :
- 8541.21.00.95
- Radiation Hardening :
- No
- Terminal Position :
- Dual
- Number of Elements :
- 1
- Pin Count :
- 3
- Current - Collector Cutoff (Max) :
- 400nA
- Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 100mA 1V
- Pbfree Code :
- No
- Turn Off Time-Max (toff) :
- 18ns
- Qualification Status :
- Qualified
- Turn On Time-Max (ton) :
- 12ns
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Number of Pins :
- 3
- Mount :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 450mV @ 10mA, 100mA
- Power - Max :
- 360mW
- Mounting Type :
- Surface Mount
- Transistor Type :
- NPN
- Number of Terminations :
- 3
- Factory Lead Time :
- 33 Weeks
- Polarity/Channel Type :
- NPN
- RoHS Status :
- Non-RoHS Compliant
- Operating Temperature :
- -65°C~200°C TJ
- Package / Case :
- 3-SMD, No Lead
- JESD-609 Code :
- e0
- Series :
- Military, MIL-PRF-19500/317
- Max Power Dissipation :
- 600mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- JANS2N2369AUB
NPN -65°C~200°C TJ 400nA 1 Elements 3 Terminations SILICON NPN 3-SMD, No Lead Bulk Surface Mount
JANS2N2369AUB Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 20 @ 100mA 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 450mV @ 10mA, 100mA.
JANS2N2369AUB Features
the DC current gain for this device is 20 @ 100mA 1V
the vce saturation(Max) is 450mV @ 10mA, 100mA
JANS2N2369AUB Applications
There are a lot of Microsemi Corporation
JANS2N2369AUB applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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