JAN2N7236U

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-267AB

Power Dissipation-Max :

4W Ta 125W Tc

Transistor Application :

SWITCHING

Power Dissipation :

4W

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

18A Tc

JESD-609 Code :

e0

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

No

Number of Terminations :

3

Drain-source On Resistance-Max :

0.22Ohm

Pin Count :

3

Drain to Source Voltage (Vdss) :

100V

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Terminal Finish :

Tin/Lead (Sn/Pb)

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Bulk

Number of Pins :

3

Qualification Status :

Qualified

Vgs (Max) :

±20V

Terminal Position :

Dual

Rds On (Max) @ Id, Vgs :

220m Ω @ 18A, 10V

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

18A

Avalanche Energy Rating (Eas) :

500 mJ

Gate to Source Voltage (Vgs) :

20V

Series :

Military, MIL-PRF-19500/595

Configuration :

Single

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

72A

Mounting Type :

Surface Mount

ECCN Code :

EAR99

RoHS Status :

Non-RoHS Compliant

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

1997