JAN2N7236

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Radiation Hardening :

No

Packaging :

Bulk

Qualification Status :

Qualified

Pbfree Code :

No

Avalanche Energy Rating (Eas) :

500 mJ

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Package / Case :

TO-254-3, TO-254AA (Straight Leads)

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

RoHS Status :

Non-RoHS Compliant

Mounting Type :

Through Hole

Series :

Military, MIL-PRF-19500/595

JESD-30 Code :

S-CSFM-P3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Configuration :

Single

Rds On (Max) @ Id, Vgs :

220m Ω @ 18A, 10V

Number of Terminations :

3

Terminal Form :

PIN/PEG

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Pin Count :

3

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

100V

Mount :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

4W

Gate to Source Voltage (Vgs) :

20V

Published :

1997

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

18A

JESD-609 Code :

e0

Terminal Finish :

Tin/Lead (Sn/Pb)

Power Dissipation-Max :

4W Ta 125W Tc

Vgs(th) (Max) @ Id :

4V @ 250µA

Pulsed Drain Current-Max (IDM) :

72A

Case Connection :

Isolated

FET Type :

P-Channel

Terminal Position :

Single

Drain-source On Resistance-Max :

0.22Ohm