JAN2N7228
- Mfr.Part #
- JAN2N7228
- Manufacturer
- Microsemi
- Package / Case
- TO-254-3, TO-254AA (Straight Leads)
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 12A TO254AA
- Stock
- 32,524
- In Stock :
- 32,524
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- Manufacturer :
- Microsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pin Count :
- 3
- Radiation Hardening :
- No
- RoHS Status :
- Non-RoHS Compliant
- Number of Elements :
- 1
- Qualification Status :
- Qualified
- Current - Continuous Drain (Id) @ 25°C :
- 12A Tc
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- DS Breakdown Voltage-Min :
- 500V
- FET Type :
- N-Channel
- Published :
- 2015
- Reference Standard :
- MIL-19500
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Operating Temperature :
- -55°C~150°C TJ
- Avalanche Energy Rating (Eas) :
- 750 mJ
- Package / Case :
- TO-254-3, TO-254AA (Straight Leads)
- Rds On (Max) @ Id, Vgs :
- 515m Ω @ 12A, 10V
- Power Dissipation-Max :
- 4W Ta 150W Tc
- HTS Code :
- 8541.29.00.95
- Pulsed Drain Current-Max (IDM) :
- 48A
- Terminal Position :
- Single
- Mounting Type :
- Through Hole
- Gate to Source Voltage (Vgs) :
- 20V
- Additional Feature :
- High Reliability
- Case Connection :
- Isolated
- Drain to Source Voltage (Vdss) :
- 500V
- Number of Terminations :
- 3
- Continuous Drain Current (ID) :
- 12A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- PIN/PEG
- Series :
- Military, MIL-PRF-19500/592
- Gate Charge (Qg) (Max) @ Vgs :
- 120nC @ 10V
- Packaging :
- Bulk
- Vgs (Max) :
- ±20V
- Pbfree Code :
- No
- Operating Mode :
- ENHANCEMENT MODE
- Number of Pins :
- 3
- Drain-source On Resistance-Max :
- 0.515Ohm
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Mount :
- Through Hole
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Datasheets
- JAN2N7228
N-Channel Bulk 515m Ω @ 12A, 10V ±20V 120nC @ 10V 500V TO-254-3, TO-254AA (Straight Leads)
JAN2N7228 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 750 mJ.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 12A amps.As far as peak drain current is concerned, its maximum pulsed current is 48A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 500V to maintain normal operation.To operate this transistor, you will need a 500V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
JAN2N7228 Features
the avalanche energy rating (Eas) is 750 mJ
a continuous drain current (ID) of 12A
based on its rated peak drain current 48A.
a 500V drain to source voltage (Vdss)
JAN2N7228 Applications
There are a lot of Microsemi Corporation
JAN2N7228 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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