JAN2N7227U

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

Military, MIL-PRF-19500/592

Power Dissipation-Max :

4W Ta 150W Tc

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

4V @ 250µA

Package / Case :

TO-267AB

Number of Elements :

1

Reference Standard :

MIL-19500

Drain to Source Voltage (Vdss) :

400V

Number of Pins :

3

Case Connection :

DRAIN

Terminal Position :

BOTTOM

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Packaging :

Bulk

Continuous Drain Current (ID) :

14A

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

1997

DS Breakdown Voltage-Min :

400V

Rds On (Max) @ Id, Vgs :

415m Ω @ 14A, 10V

Drain-source On Resistance-Max :

0.415Ohm

Number of Terminations :

3

Mounting Type :

Surface Mount

Pin Count :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

Non-RoHS Compliant

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

14A Tc

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±20V

Qualification Status :

Qualified

JEDEC-95 Code :

TO-276AB