JAN2N7227

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Bulk

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

4W Ta 150W Tc

Reference Standard :

MIL-19500

Transistor Element Material :

SILICON

HTS Code :

8541.29.00.95

Drain to Source Voltage (Vdss) :

400V

Number of Terminations :

3

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

No

Current - Continuous Drain (Id) @ 25°C :

14A Tc

Rds On (Max) @ Id, Vgs :

415m Ω @ 14A, 10V

Gate to Source Voltage (Vgs) :

20V

Terminal Position :

Single

Pin Count :

3

Qualification Status :

Qualified

Drain-source On Resistance-Max :

0.415Ohm

Package / Case :

TO-254-3, TO-254AA (Straight Leads)

Case Connection :

Isolated

Number of Pins :

3

Transistor Application :

SWITCHING

Terminal Form :

PIN/PEG

Continuous Drain Current (ID) :

14A

Mounting Type :

Through Hole

Mount :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Vgs (Max) :

±20V

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Published :

1997

DS Breakdown Voltage-Min :

400V

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

4V @ 250µA

Additional Feature :

High Reliability

Pulsed Drain Current-Max (IDM) :

56A

Series :

Military, MIL-PRF-19500/592

RoHS Status :

Non-RoHS Compliant

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

700 mJ