JAN2N7225

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Continuous Drain Current (ID) :

27.4A

Terminal Form :

PIN/PEG

Drain-source On Resistance-Max :

0.105Ohm

Transistor Application :

SWITCHING

Reference Standard :

MIL-19500

Power Dissipation-Max :

4W Ta 150W Tc

Rds On (Max) @ Id, Vgs :

105m Ω @ 27.4A, 10V

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

Pin Count :

3

Vgs(th) (Max) @ Id :

4V @ 250µA

Published :

1997

Radiation Hardening :

No

Packaging :

Bulk

RoHS Status :

Non-RoHS Compliant

Qualification Status :

Qualified

Package / Case :

TO-254-3, TO-254AA (Straight Leads)

Drain to Source Voltage (Vdss) :

200V

Additional Feature :

High Reliability

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

Series :

Military, MIL-PRF-19500/592

Current - Continuous Drain (Id) @ 25°C :

27.4A Tc

Terminal Position :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

HTS Code :

8541.29.00.95

Pulsed Drain Current-Max (IDM) :

110A

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Case Connection :

Isolated

Operating Mode :

ENHANCEMENT MODE

Mount :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

115nC @ 10V

DS Breakdown Voltage-Min :

200V

Number of Terminations :

3

Number of Pins :

3