JAN2N6901

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Packaging :

Bulk

Terminal Form :

Wire

RoHS Status :

Non-RoHS Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Mount :

Through Hole

Number of Elements :

1

Continuous Drain Current (ID) :

1.69A

Current - Continuous Drain (Id) @ 25°C :

1.69A Tc

Number of Pins :

3

FET Type :

N-Channel

DS Breakdown Voltage-Min :

100V

HTS Code :

8541.21.00.95

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

BOTTOM

Drain to Source Voltage (Vdss) :

100V

Rds On (Max) @ Id, Vgs :

1.4 Ω @ 1.07A, 5V

Vgs(th) (Max) @ Id :

2V @ 1mA

Vgs (Max) :

±10V

Mounting Type :

Through Hole

Turn-Off Delay Time :

45 ns

Gate to Source Voltage (Vgs) :

10V

Radiation Hardening :

No

Operating Temperature :

-55°C~150°C TJ

Pin Count :

2

Gate Charge (Qg) (Max) @ Vgs :

5nC @ 5V

Qualification Status :

Qualified

Fall Time (Typ) :

80 ns

Power Dissipation-Max :

8.33W Tc

Drive Voltage (Max Rds On,Min Rds On) :

5V

Package / Case :

TO-205AF Metal Can

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Published :

1997

Reference Standard :

MIL-19500/570B

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

25 ns

Number of Terminations :

3

Series :

Military, MIL-PRF-19500/570

Rise Time :

80ns