JAN2N6849U

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

Non-RoHS Compliant

Vgs (Max) :

±20V

Published :

1997

Gate to Source Voltage (Vgs) :

20V

FET Type :

P-Channel

Current - Continuous Drain (Id) @ 25°C :

6.5A Tc

Series :

Military, MIL-PRF-19500/564

Drain to Source Voltage (Vdss) :

100V

Power Dissipation-Max :

800mW Ta 25W Tc

Vgs(th) (Max) @ Id :

4V @ 250µA

Packaging :

Bulk

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

18-CLCC

Rds On (Max) @ Id, Vgs :

320m Ω @ 6.5A, 10V

Qualification Status :

Qualified

Gate Charge (Qg) (Max) @ Vgs :

34.8nC @ 10V

Continuous Drain Current (ID) :

6.5A

Mount :

Surface Mount