JAN2N6804

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

4V @ 250µA

Rds On (Max) @ Id, Vgs :

360m Ω @ 11A, 10V

Pin Count :

2

Reference Standard :

MIL-19500

Continuous Drain Current (ID) :

11A

Mount :

Through Hole

Radiation Hardening :

No

Fall Time (Typ) :

140 ns

Number of Pins :

3

Package / Case :

TO-204AA, TO-3

Mounting Type :

Through Hole

DS Breakdown Voltage-Min :

100V

JESD-30 Code :

O-MBFM-P2

Packaging :

Bulk

Power Dissipation-Max :

4W Ta 75W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Drain to Source Voltage (Vdss) :

100V

Published :

1997

RoHS Status :

Non-RoHS Compliant

FET Type :

P-Channel

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

140 ns

Qualification Status :

Qualified

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Additional Feature :

HIGH RELIABILTY

Terminal Finish :

Tin/Lead (Sn/Pb)

Terminal Form :

PIN/PEG

Transistor Application :

SWITCHING

JESD-609 Code :

e0

Rise Time :

140ns

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Pbfree Code :

No

Terminal Position :

BOTTOM

HTS Code :

8541.29.00.95

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

Pulsed Drain Current-Max (IDM) :

50A

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

Military, MIL-PRF-19500/562

Turn On Delay Time :

60 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

2