JAN2N6800U

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

34.75nC @ 10V

Fall Time (Typ) :

35 ns

Vgs (Max) :

±20V

Series :

Military, MIL-PRF-19500/557

Rds On (Max) @ Id, Vgs :

1.1 Ω @ 3A, 10V

Published :

1997

Turn-Off Delay Time :

35 ns

Drain to Source Voltage (Vdss) :

400V

Mount :

Surface Mount

Qualification Status :

Qualified

Packaging :

Bulk

Vgs(th) (Max) @ Id :

4V @ 250µA

Turn On Delay Time :

30 ns

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

RoHS Status :

Non-RoHS Compliant

Continuous Drain Current (ID) :

3A

FET Type :

N-Channel

Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

35ns

Power Dissipation-Max :

800mW Ta 25W Tc

Current - Continuous Drain (Id) @ 25°C :

3A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate to Source Voltage (Vgs) :

20V

Package / Case :

18-CLCC

Radiation Hardening :

No

Drain Current-Max (Abs) (ID) :

3A