JAN2N6800

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

3A

RoHS Status :

Non-RoHS Compliant

Rds On (Max) @ Id, Vgs :

1.1 Ω @ 3A, 10V

Number of Terminations :

3

HTS Code :

8541.21.00.95

Number of Pins :

3

Packaging :

Bulk

Number of Elements :

1

Additional Feature :

High Reliability

Operating Temperature :

-55°C~150°C TJ

Qualification Status :

Qualified

Terminal Position :

BOTTOM

FET Type :

N-Channel

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

4V @ 250µA

Package / Case :

TO-205AF Metal Can

Mount :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

14A

Terminal Form :

Wire

Gate Charge (Qg) (Max) @ Vgs :

34.75nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Series :

Military, MIL-PRF-19500/557

Mounting Type :

Through Hole

DS Breakdown Voltage-Min :

400V

Reference Standard :

MIL-19500

Published :

1997

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

20V

Drain Current-Max (Abs) (ID) :

3A

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

3A Tc

Power Dissipation-Max :

800mW Ta 25W Tc

Drain to Source Voltage (Vdss) :

400V