JAN2N6798U

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Case Connection :

SOURCE

JESD-609 Code :

e4

Vgs (Max) :

±20V

JESD-30 Code :

R-CQCC-N15

DS Breakdown Voltage-Min :

200V

Terminal Position :

QUAD

FET Type :

N-Channel

Turn On Delay Time :

30 ns

Mounting Type :

Surface Mount

Number of Terminations :

15

Gate to Source Voltage (Vgs) :

20V

Series :

Military, MIL-PRF-19500/557

Operating Temperature :

-55°C~150°C TJ

Package / Case :

18-CLCC

Rds On (Max) @ Id, Vgs :

420m Ω @ 5.5A, 10V

Mount :

Surface Mount

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

5.5A

RoHS Status :

Non-RoHS Compliant

Packaging :

Bulk

Rise Time :

50ns

Drain-source On Resistance-Max :

0.42Ohm

Terminal Finish :

Gold (Au) - with Nickel (Ni) barrier

Pbfree Code :

yes

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

5.5A Tc

Qualification Status :

Qualified

Power Dissipation-Max :

800mW Ta 25W Tc

Pin Count :

18

Gate Charge (Qg) (Max) @ Vgs :

42.07nC @ 10V

Drain to Source Voltage (Vdss) :

200V

Fall Time (Typ) :

40 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn-Off Delay Time :

50 ns

Reference Standard :

MIL-19500/557

Operating Mode :

ENHANCEMENT MODE