JAN2N6798

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

TO-205AF Metal Can

Vgs (Max) :

±20V

Number of Terminations :

3

Power Dissipation-Max :

800mW Ta 25W Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V

Qualification Status :

Qualified

Reference Standard :

MIL-19500

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

4V @ 250µA

Terminal Form :

Wire

RoHS Status :

Non-RoHS Compliant

Case Connection :

DRAIN

ECCN Code :

EAR99

HTS Code :

8541.21.00.95

Current - Continuous Drain (Id) @ 25°C :

5.5A Tc

Drain-source On Resistance-Max :

0.42Ohm

Operating Mode :

ENHANCEMENT MODE

Published :

1997

Number of Pins :

3

Series :

Military, MIL-PRF-19500/557

Rds On (Max) @ Id, Vgs :

420m Ω @ 5.5A, 10V

Drain to Source Voltage (Vdss) :

200V

Configuration :

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

200V

Packaging :

Bulk

Additional Feature :

High Reliability

Number of Elements :

1

Mount :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Position :

BOTTOM

Pbfree Code :

No

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

42.07nC @ 10V

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

5.5A

Operating Temperature :

-55°C~150°C TJ