JAN2N6796U

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

8A

Rise Time :

75ns

Number of Elements :

1

JESD-609 Code :

e4

DS Breakdown Voltage-Min :

100V

Fall Time (Typ) :

45 ns

Packaging :

Bulk

Power Dissipation-Max :

800mW Ta 25W Tc

Radiation Hardening :

No

Vgs (Max) :

±20V

Qualification Status :

Qualified

Reference Standard :

MIL-19500/557

Package / Case :

18-CLCC

Turn On Delay Time :

30 ns

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Finish :

Gold (Au) - with Nickel (Ni) barrier

Operating Temperature :

-55°C~150°C TJ

Drain-source On Resistance-Max :

0.195Ohm

Terminal Position :

QUAD

Gate to Source Voltage (Vgs) :

20V

Gate Charge (Qg) (Max) @ Vgs :

28.51nC @ 10V

Series :

Military, MIL-PRF-19500/557

Drain Current-Max (Abs) (ID) :

8A

Pbfree Code :

yes

Mount :

Surface Mount

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

100V

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-CQCC-N15

Turn-Off Delay Time :

40 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

15

RoHS Status :

Non-RoHS Compliant

Published :

1997

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Rds On (Max) @ Id, Vgs :

195m Ω @ 8A, 10V

Pin Count :

16