JAN2N6796

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

Military, MIL-PRF-19500/557

Mount :

Through Hole

FET Type :

N-Channel

Terminal Form :

Wire

RoHS Status :

Non-RoHS Compliant

Mounting Type :

Through Hole

Reach Compliance Code :

Unknown

Number of Elements :

1

ECCN Code :

EAR99

Continuous Drain Current (ID) :

8A

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs :

28.51nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

8A

Case Connection :

DRAIN

Pin Count :

2

Package / Case :

TO-205AF Metal Can

Reference Standard :

MIL-19500

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

100V

Configuration :

SINGLE WITH BUILT-IN DIODE

Turn Off Time-Max (toff) :

85ns

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

100V

Drain-source On Resistance-Max :

0.18ohm

Packaging :

Bulk

Rds On (Max) @ Id, Vgs :

195m Ω @ 8A, 10V

Turn On Time-Max (ton) :

105ns

Terminal Position :

BOTTOM

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

1997

Power Dissipation-Max :

800mW Ta 25W Tc

Qualification Status :

Qualified

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-55°C~150°C TJ

HTS Code :

8541.21.00.95