JAN2N6790U

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

850m Ω @ 3.5A, 10V

Case Connection :

SOURCE

Terminal Form :

NO LEAD

Terminal Position :

QUAD

Drain Current-Max (Abs) (ID) :

3.5A

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

2.8A Tc

Vgs(th) (Max) @ Id :

4V @ 250µA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

Military, MIL-PRF-19500/555

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Additional Feature :

HIGH RELIABILTY

DS Breakdown Voltage-Min :

200V

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

Non-RoHS Compliant

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Published :

1997

Gate Charge (Qg) (Max) @ Vgs :

14.3nC @ 10V

Mounting Type :

Surface Mount

Package / Case :

18-CLCC

JESD-30 Code :

R-CQCC-N15

Power Dissipation-Max :

800mW Tc

Pin Count :

18/15

Number of Elements :

1

Qualification Status :

Qualified

Packaging :

Bulk

Continuous Drain Current (ID) :

2.8A

Number of Terminations :

15

Pulsed Drain Current-Max (IDM) :

11A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs (Max) :

±20V

Drain-source On Resistance-Max :

0.85Ohm

Mount :

Surface Mount

Drain to Source Voltage (Vdss) :

200V

Reference Standard :

MIL-19500