JAN2N6790

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

HTS Code :

8541.29.00.95

Operating Mode :

ENHANCEMENT MODE

Mount :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.8Ohm

Turn Off Time-Max (toff) :

100ns

Published :

1997

Pulsed Drain Current-Max (IDM) :

14A

Reference Standard :

MIL-19500

Power Dissipation-Max :

800mW Tc

Drain to Source Voltage (Vdss) :

200V

Rds On (Max) @ Id, Vgs :

850m Ω @ 3.5A, 10V

Gate Charge (Qg) (Max) @ Vgs :

14.3nC @ 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

3.5A Tc

JESD-30 Code :

O-MBCY-W3

Continuous Drain Current (ID) :

3.5A

Package / Case :

TO-205AF Metal Can

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Terminal Position :

BOTTOM

Case Connection :

DRAIN

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e0

DS Breakdown Voltage-Min :

200V

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Form :

Wire

Number of Elements :

1

FET Type :

N-Channel

Qualification Status :

Qualified

Number of Terminations :

3

RoHS Status :

Non-RoHS Compliant

Packaging :

Bulk

Mounting Type :

Through Hole

Series :

Military, MIL-PRF-19500/555

Turn On Time-Max (ton) :

90ns

Terminal Finish :

Tin/Lead (Sn/Pb)