JAN2N6788U

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Drain-source On Resistance-Max :

0.35Ohm

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

4.5A Tc

DS Breakdown Voltage-Min :

100V

JESD-30 Code :

R-CQCC-N15

Additional Feature :

HIGH RELIABILTY

Rds On (Max) @ Id, Vgs :

350m Ω @ 6A, 10V

Case Connection :

SOURCE

Vgs(th) (Max) @ Id :

4V @ 250µA

Terminal Position :

QUAD

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Bulk

Vgs (Max) :

±20V

Package / Case :

18-CLCC

Rise Time :

70ns

Continuous Drain Current (ID) :

4.5A

Drain to Source Voltage (Vdss) :

100V

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Radiation Hardening :

No

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

6A

Mounting Type :

Surface Mount

Mount :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

ECCN Code :

EAR99

RoHS Status :

Non-RoHS Compliant

Series :

Military, MIL-PRF-19500/555

Power Dissipation-Max :

800mW Tc

Number of Terminations :

15

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Qualified

Pulsed Drain Current-Max (IDM) :

18A

Reference Standard :

MIL-19500

Fall Time (Typ) :

70 ns

Operating Temperature :

-55°C~150°C TJ