JAN2N6782

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

14A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

100V

Number of Pins :

3

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Number of Terminations :

3

Turn On Time-Max (ton) :

40ns

Packaging :

Bulk

Continuous Drain Current (ID) :

3.5A

Turn Off Time-Max (toff) :

45ns

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Series :

Military, MIL-PRF-19500/556

Vgs(th) (Max) @ Id :

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs :

8.1nC @ 10V

Operating Temperature :

-55°C~150°C TJ

Case Connection :

DRAIN

Power Dissipation-Max :

800mW Ta 15W Tc

Rds On (Max) @ Id, Vgs :

610m Ω @ 3.5A, 10V

Qualification Status :

Qualified

Current - Continuous Drain (Id) @ 25°C :

3.5A Tc

Gate to Source Voltage (Vgs) :

20V

Pbfree Code :

No

JESD-609 Code :

e0

Drain-source On Resistance-Max :

0.6Ohm

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

100V

Terminal Finish :

Tin/Lead (Sn/Pb)

Mount :

Through Hole

RoHS Status :

Non-RoHS Compliant

Reference Standard :

MIL-19500

Package / Case :

TO-205AF Metal Can

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

BOTTOM

Terminal Form :

Wire

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

Number of Elements :

1