JAN2N6770

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

500m Ω @ 12A, 10V

Series :

Military, MIL-PRF-19500/543

Pbfree Code :

No

Avalanche Energy Rating (Eas) :

750 mJ

Terminal Finish :

Tin/Lead (Sn/Pb)

Turn Off Time-Max (toff) :

300ns

Published :

1997

Mounting Type :

Through Hole

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Vgs (Max) :

±20V

Qualification Status :

Qualified

Contact Plating :

Lead, Tin

JEDEC-95 Code :

TO-204AA

Gate Charge (Qg) (Max) @ Vgs :

120nC @ 10V

Transistor Application :

SWITCHING

JESD-609 Code :

e0

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pin Count :

2

Packaging :

Bulk

Terminal Position :

BOTTOM

Power Dissipation :

4W

JESD-30 Code :

O-MBFM-P2

Drain to Source Voltage (Vdss) :

500V

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

4W Ta 150W Tc

Package / Case :

TO-204AE

Terminal Form :

PIN/PEG

Turn On Time-Max (ton) :

225ns

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

Non-RoHS Compliant

Number of Elements :

1

Continuous Drain Current (ID) :

12A

Number of Terminations :

2

Factory Lead Time :

36 Weeks

Mount :

Through Hole

Rise Time :

190ns

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.4Ohm

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 250µA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~150°C TJ

Pulsed Drain Current-Max (IDM) :

48A

Case Connection :

DRAIN

DS Breakdown Voltage-Min :

500V