JAN2N6764T1

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Terminal Form :

PIN/PEG

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

65m Ω @ 38A, 10V

Packaging :

Bulk

Terminal Position :

Single

DS Breakdown Voltage-Min :

100V

Series :

Military, MIL-PRF-19500/543

Number of Elements :

1

Package / Case :

TO-254-3, TO-254AA (Straight Leads)

RoHS Status :

Non-RoHS Compliant

Drain to Source Voltage (Vdss) :

100V

Transistor Element Material :

SILICON

Power Dissipation-Max :

4W Ta 150W Tc

Operating Temperature :

-55°C~150°C TJ

Published :

1997

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Mount :

Through Hole

Qualification Status :

Qualified

Pin Count :

3

JESD-30 Code :

S-XSFM-P3

Gate Charge (Qg) (Max) @ Vgs :

125nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

38A Tc

Case Connection :

Isolated

Continuous Drain Current (ID) :

38A

Drain-source On Resistance-Max :

0.065Ohm

Vgs (Max) :

±20V

Reference Standard :

MIL-19500/543

Mounting Type :

Through Hole

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)