JAN2N6764

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

152A

Packaging :

Bulk

Package / Case :

TO-204AE

HTS Code :

8541.29.00.95

Continuous Drain Current (ID) :

38A

Rds On (Max) @ Id, Vgs :

65m Ω @ 38A, 10V

JESD-30 Code :

O-MBFM-P2

Transistor Application :

SWITCHING

Number of Pins :

3

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Through Hole

Gate to Source Voltage (Vgs) :

20V

Published :

1997

Number of Elements :

1

Reach Compliance Code :

not_compliant

Avalanche Energy Rating (Eas) :

150 mJ

Vgs (Max) :

±20V

Number of Terminations :

2

Qualification Status :

Qualified

FET Type :

N-Channel

Case Connection :

DRAIN

RoHS Status :

Non-RoHS Compliant

Terminal Position :

BOTTOM

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

38A Tc

Power Dissipation-Max :

4W Ta 150W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

125nC @ 10V

Terminal Form :

PIN/PEG

JESD-609 Code :

e0

Drain to Source Voltage (Vdss) :

100V

DS Breakdown Voltage-Min :

100V

Drain-source On Resistance-Max :

0.055Ohm

Series :

Military, MIL-PRF-19500/543

Pin Count :

2

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Finish :

Tin/Lead (Sn/Pb)

Rise Time :

190ns

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

4V @ 250µA