JAN2N6762

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Reference Standard :

MIL-19500

Terminal Finish :

Tin/Lead (Sn/Pb)

Fall Time (Typ) :

30 ns

JESD-30 Code :

O-MBFM-P2

Transistor Element Material :

SILICON

Pin Count :

2

Number of Elements :

1

Number of Terminations :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Case Connection :

DRAIN

Terminal Form :

PIN/PEG

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

4W Ta 75W Tc

Terminal Position :

BOTTOM

DS Breakdown Voltage-Min :

500V

JESD-609 Code :

e0

Continuous Drain Current (ID) :

4.5A

Number of Pins :

3

Vgs(th) (Max) @ Id :

4V @ 250µA

Published :

1997

Operating Mode :

ENHANCEMENT MODE

Series :

Military, MIL-PRF-19500/542

Qualification Status :

Qualified

Package / Case :

TO-204AA, TO-3

Rise Time :

40ns

Packaging :

Bulk

RoHS Status :

Non-RoHS Compliant

Current - Continuous Drain (Id) @ 25°C :

4.5A Tc

Mount :

Through Hole

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

500V

Operating Temperature :

-55°C~150°C TJ

Pulsed Drain Current-Max (IDM) :

18A

Turn On Delay Time :

30 ns

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

1.8 Ω @ 4.5A, 10V

Pbfree Code :

No

Mounting Type :

Through Hole

Turn-Off Delay Time :

80 ns