JAN2N6760

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

Military, MIL-PRF-19500/542

Number of Terminations :

2

Packaging :

Bulk

Pin Count :

2

Drain to Source Voltage (Vdss) :

400V

Vgs(th) (Max) @ Id :

4V @ 250µA

Radiation Hardening :

No

Continuous Drain Current (ID) :

5.5A

DS Breakdown Voltage-Min :

400V

Transistor Application :

SWITCHING

Fall Time (Typ) :

35 ns

JESD-30 Code :

O-MBFM-P2

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

Rise Time :

40ns

Mount :

Through Hole

FET Type :

N-Channel

Number of Elements :

1

JESD-609 Code :

e0

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 10V

Case Connection :

DRAIN

Terminal Finish :

Tin/Lead (Sn/Pb)

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

3

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

4W Ta 75W Tc

Pbfree Code :

No

Terminal Position :

BOTTOM

Terminal Form :

PIN/PEG

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~150°C TJ

Reference Standard :

MIL-19500

Qualification Status :

Qualified

Current - Continuous Drain (Id) @ 25°C :

5.5A Tc

Package / Case :

TO-204AA, TO-3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

1997

Rds On (Max) @ Id, Vgs :

1.22 Ω @ 5.5A, 10V

RoHS Status :

Non-RoHS Compliant

Pulsed Drain Current-Max (IDM) :

22A