JAN2N6758
- Mfr.Part #
- JAN2N6758
- Manufacturer
- Microsemi
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 9A TO204AA
- Stock
- 6,617
- In Stock :
- 6,617
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- Manufacturer :
- Microsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- ECCN Code :
- EAR99
- Turn-Off Delay Time :
- 60 ns
- Turn On Delay Time :
- 35 ns
- Terminal Position :
- BOTTOM
- Terminal Form :
- PIN/PEG
- Reference Standard :
- MIL-19500/542
- Pin Count :
- 2
- Package / Case :
- TO-204AA, TO-3
- Number of Elements :
- 1
- Rds On (Max) @ Id, Vgs :
- 490m Ω @ 9A, 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Operating Temperature :
- -55°C~150°C TJ
- Number of Pins :
- 3
- Drain Current-Max (Abs) (ID) :
- 9A
- JESD-30 Code :
- O-MBFM-P2
- Current - Continuous Drain (Id) @ 25°C :
- 9A Tc
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- DS Breakdown Voltage-Min :
- 200V
- Case Connection :
- DRAIN
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Qualification Status :
- Qualified
- Drain to Source Voltage (Vdss) :
- 200V
- Transistor Element Material :
- SILICON
- Drain-source On Resistance-Max :
- 0.49Ohm
- Transistor Application :
- SWITCHING
- Mounting Type :
- Through Hole
- Power Dissipation-Max :
- 4W Ta 75W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 39nC @ 10V
- RoHS Status :
- Non-RoHS Compliant
- Series :
- Military, MIL-PRF-19500/542
- Radiation Hardening :
- No
- FET Type :
- N-Channel
- JESD-609 Code :
- e0
- Fall Time (Typ) :
- 40 ns
- Mount :
- Through Hole
- Pbfree Code :
- No
- Vgs (Max) :
- ±20V
- Operating Mode :
- ENHANCEMENT MODE
- Rise Time :
- 80ns
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current (ID) :
- 9A
- Packaging :
- Bulk
- Published :
- 1997
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Terminations :
- 2
- Datasheets
- JAN2N6758
N-Channel Bulk 490m Ω @ 9A, 10V ±20V 39nC @ 10V 200V TO-204AA, TO-3
JAN2N6758 Overview
The drain current is the maximum continuous current the device can conduct, and this device has 9A continuous drain current (ID).Drain current refers to the maximum continuous current a device can conduct, and it is 9A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 60 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 35 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 200V.For this transistor to work, a voltage 200V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
JAN2N6758 Features
a continuous drain current (ID) of 9A
the turn-off delay time is 60 ns
a 200V drain to source voltage (Vdss)
JAN2N6758 Applications
There are a lot of Microsemi Corporation
JAN2N6758 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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