JAN2N6756

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

35 ns

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin/Lead (Sn/Pb)

Package / Case :

TO-204AA, TO-3

Transistor Application :

SWITCHING

Terminal Form :

PIN/PEG

Mounting Type :

Through Hole

Radiation Hardening :

No

JESD-30 Code :

O-MBFM-P2

Reference Standard :

MIL-19500/542G

Packaging :

Bulk

Operating Temperature :

-55°C~150°C TJ

DS Breakdown Voltage-Min :

100V

Pulsed Drain Current-Max (IDM) :

56A

Number of Pins :

3

Continuous Drain Current (ID) :

14A

Fall Time (Typ) :

45 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Gate to Source Voltage (Vgs) :

20V

Terminal Position :

BOTTOM

Case Connection :

DRAIN

Power Dissipation-Max :

4W Ta 75W Tc

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.21Ohm

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

100V

Qualification Status :

Qualified

Rds On (Max) @ Id, Vgs :

210m Ω @ 14A, 10V

Rise Time :

80ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e0

ECCN Code :

EAR99

Turn-Off Delay Time :

60 ns

RoHS Status :

Non-RoHS Compliant

Series :

Military, MIL-PRF-19500/542

Pin Count :

2

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Number of Terminations :

2

Published :

1997

Current - Continuous Drain (Id) @ 25°C :

14A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Mount :

Through Hole