IXTF250N075T
- Mfr.Part #
- IXTF250N075T
- Manufacturer
- Littelfuse
- Package / Case
- i4-Pac™-5
- Datasheet
- Download
- Description
- MOSFET N-CH 75V 140A I4PAC
- Stock
- 28,610
- In Stock :
- 28,610
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package :
- Tube
- Current - Continuous Drain (Id) @ 25°C :
- 140A Tc
- Packaging :
- Tube
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain to Source Resistance :
- 4.4 mΩ
- Polarity/Channel Type :
- N-Channel
- Pbfree Code :
- yes
- Base Product Number :
- IXTF250
- Mounting Type :
- Through Hole
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- FET Feature :
- --
- Input Capacitance (Ciss) (Max) @ Vds :
- 9900pF @ 25V
- ECCN Code :
- EAR99
- Continuous Drain Current (ID) :
- 140A
- Mount :
- Through Hole
- Input Capacitance :
- 9.9 nF
- Number of Elements :
- 1
- Rise Time :
- 50ns
- RoHS Status :
- RoHS Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Case Connection :
- Isolated
- Product Status :
- Obsolete
- FET Type :
- N-Channel
- Turn-Off Delay Time :
- 58 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 200nC @ 10V
- Power Dissipation :
- 200W
- Min Operating Temperature :
- -55 °C
- Power Dissipation-Max :
- 200W Tc
- Terminal Form :
- THROUGH-HOLE
- Package / Case :
- i4-Pac™-5
- Published :
- 2007
- Transistor Application :
- SWITCHING
- Reach Compliance Code :
- Compliant
- Number of Terminations :
- 5
- Number of Pins :
- 5
- Surface Mount :
- No
- Pin Count :
- 5
- Package Shape :
- RECTANGULAR
- DS Breakdown Voltage-Min :
- 75 V
- Drain-source On Resistance-Max :
- 0.004ohm
- Qualification Status :
- Not Qualified
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Max Power Dissipation :
- 200 W
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Breakdown Voltage :
- 75V
- Rds On Max :
- 4.4 mΩ
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Pulsed Drain Current-Max (IDM) :
- 560 A
- Vgs (Max) :
- ±20V
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drain to Source Voltage (Vdss) :
- 75V
- Transistor Element Material :
- SILICON
- Power Dissipation (Max) :
- 200W (Tc)
- RoHS :
- Compliant
- JESD-609 Code :
- e1
- Manufacturer :
- IXYS Corporation
- Fall Time (Typ) :
- 45 ns
- Rds On (Max) @ Id, Vgs :
- 4.4m Ω @ 50A, 10V
- Terminal Position :
- Single
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Number of Terminals :
- 5
- Drain Current-Max (Abs) (ID) :
- 130A
- Operating Temperature :
- -55°C~175°C TJ
- Max Operating Temperature :
- 175 °C
- Series :
- TrenchMV™
- Supplier Device Package :
- ISOPLUS i4-PAC™
- JESD-30 Code :
- R-PSIP-T5
- Datasheets
- IXTF250N075T
N-Channel Tube 4.4m Ω @ 50A, 10V ±20V 9900pF @ 25V 200nC @ 10V 75V i4-Pac™-5
IXTF250N075T Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 9900pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 140A amps.In this device, the drain-source breakdown voltage is 75V and VGS=75V, so the drain-source breakdown voltage is 75V in this case.A device can conduct a maximum continuous current of [130A] according to its drain current.It is [58 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 560 A.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 4.4 mΩ.The DS breakdown voltage should be maintained above 75 V to maintain normal operation.To operate this transistor, you will need a 75V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXTF250N075T Features
a continuous drain current (ID) of 140A
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 58 ns
based on its rated peak drain current 560 A.
single MOSFETs transistor is 4.4 mΩ
a 75V drain to source voltage (Vdss)
IXTF250N075T Applications
There are a lot of IXYS
IXTF250N075T applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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