IXTF200N10T

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation (Max) :

156W (Tc)

Polarity/Channel Type :

N-Channel

Channel Mode :

Enhancement

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-30 Code :

R-PSFM-T3

Number of Terminals :

3

Drain-source On Resistance-Max :

0.007Ohm

Tradename :

HiPerFET

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Form :

THROUGH-HOLE

Continuous Drain Current (ID) :

90A

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Case Connection :

Isolated

Power Dissipation-Max (Abs) :

156 W

RoHS :

Details

Transistor Application :

SWITCHING

Vgs (Max) :

±30V

Product Category :

MOSFET

Qualification Status :

Not Qualified

FET Feature :

--

Brand :

IXYS

Product Status :

Active

Additional Feature :

AVALANCHE RATED

Series :

TrenchMV™

Package / Case :

i4-Pac™-5

Power Dissipation :

200W

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package :

Tube

Fall Time (Typ) :

34 ns

Supplier Device Package :

ISOPLUS i4-PAC™

Packaging :

Tube

Surface Mount :

No

Operating Mode :

ENHANCEMENT MODE

Minimum Operating Temperature :

- 55 C

Product Type :

MOSFET

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

156W Tc

Maximum Operating Temperature :

+ 175 C

Drain to Source Breakdown Voltage :

100V

DS Breakdown Voltage-Min :

100 V

Pin Count :

5

Width :

5.21 mm

Number of Pins :

5

Mounting Type :

Through Hole

Rise Time :

31ns

Base Product Number :

IXTF200

ECCN Code :

EAR99

Number of Channels :

1 Channel

Manufacturer :

IXYS

Pbfree Code :

yes

Factory Lead Time :

28 Weeks

Transistor Type :

1 N-Channel

Length :

20.29 mm

Current - Continuous Drain (Id) @ 25°C :

90A Tc

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

500 A

Turn-Off Delay Time :

45 ns

Input Capacitance (Ciss) (Max) @ Vds :

9400pF @ 25V

Mounting Style :

Through Hole

Rds On (Max) @ Id, Vgs :

7m Ω @ 50A, 10V

Drain Current-Max (Abs) (ID) :

90 A

Gate Charge (Qg) (Max) @ Vgs :

152nC @ 10V

Reach Compliance Code :

Compliant

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Transistor Polarity :

N-Channel

Drain to Source Voltage (Vdss) :

100V

Number of Terminations :

3

JESD-609 Code :

e1

Terminal Position :

Single

FET Type :

N-Channel

Operating Temperature :

-55°C~175°C TJ

Avalanche Energy Rating (Eas) :

1500 mJ

Height :

21.34 mm

Published :

2009

Mount :

Through Hole

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Package Shape :

RECTANGULAR