IXTF03N400
- Mfr.Part #
- IXTF03N400
- Manufacturer
- Littelfuse
- Package / Case
- i4-Pac™-5 (3 Leads)
- Datasheet
- Download
- Description
- MOSFET N-CH 4000V 300MA I4PAC
- Stock
- 10,726
- In Stock :
- 10,726
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminations :
- 3
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- JESD-30 Code :
- R-PSIP-T3
- Input Capacitance (Ciss) (Max) @ Vds :
- 435pF @ 25V
- Manufacturer :
- IXYS Corporation
- Power Dissipation-Max (Abs) :
- 70 W
- Number of Elements :
- 1
- Terminal Finish :
- TIN SILVER COPPER
- Package / Case :
- i4-Pac™-5 (3 Leads)
- Additional Feature :
- UL RECOGNIZED
- Power Dissipation :
- 70W
- Pbfree Code :
- yes
- Package Shape :
- RECTANGULAR
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drain-source On Resistance-Max :
- 300 Ω
- Pulsed Drain Current-Max (IDM) :
- 0.8A
- Power Dissipation (Max) :
- 70W (Tc)
- Rise Time :
- 16ns
- Rds On (Max) @ Id, Vgs :
- 300 Ω @ 150mA, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 300mA Tc
- Continuous Drain Current (ID) :
- 300mA
- Case Connection :
- Isolated
- Mounting Type :
- Through Hole
- FET Type :
- N-Channel
- Package :
- Tube
- Packaging :
- Tube
- ECCN Code :
- EAR99
- Terminal Position :
- Single
- Fall Time (Typ) :
- 58 ns
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Product Status :
- Obsolete
- Series :
- --
- Drain to Source Breakdown Voltage :
- 4kV
- Terminal Form :
- THROUGH-HOLE
- Surface Mount :
- No
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Gate Charge (Qg) (Max) @ Vgs :
- 16.3nC @ 10V
- Base Product Number :
- IXTF02
- JESD-609 Code :
- e1
- Transistor Application :
- SWITCHING
- Gate to Source Voltage (Vgs) :
- 20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance :
- 435 pF
- Drain to Source Resistance :
- 300 Ω
- Reach Compliance Code :
- Compliant
- Polarity/Channel Type :
- N-Channel
- Transistor Element Material :
- SILICON
- RoHS :
- Compliant
- Turn-Off Delay Time :
- 86 ns
- FET Feature :
- --
- Operating Mode :
- ENHANCEMENT MODE
- Max Power Dissipation :
- 70 W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminals :
- 3
- DS Breakdown Voltage-Min :
- 4000 V
- Rds On Max :
- 300 Ω
- Operating Temperature :
- -55°C~150°C TJ
- Drain to Source Voltage (Vdss) :
- 4000V
- Vgs (Max) :
- ±20V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Drain Current-Max (Abs) (ID) :
- 0.3A
- Pin Count :
- 3
- Published :
- 2009
- RoHS Status :
- RoHS Compliant
- Power Dissipation-Max :
- 70W Tc
- Mount :
- Through Hole
- Qualification Status :
- Not Qualified
- Supplier Device Package :
- ISOPLUS i4-PAC™
- Datasheets
- IXTF03N400

N-Channel Tube 300 Ω @ 150mA, 10V ±20V 435pF @ 25V 16.3nC @ 10V 4000V i4-Pac™-5 (3 Leads)
IXTF03N400 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 435pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 300mA amps.In this device, the drain-source breakdown voltage is 4kV and VGS=4kV, so the drain-source breakdown voltage is 4kV in this case.A device can conduct a maximum continuous current of [0.3A] according to its drain current.It is [86 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 0.8A.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 300 Ω.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 4000 V to maintain normal operation.To operate this transistor, you will need a 4000V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXTF03N400 Features
a continuous drain current (ID) of 300mA
a drain-to-source breakdown voltage of 4kV voltage
the turn-off delay time is 86 ns
based on its rated peak drain current 0.8A.
single MOSFETs transistor is 300 Ω
a 4000V drain to source voltage (Vdss)
IXTF03N400 Applications
There are a lot of IXYS
IXTF03N400 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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