IXTF03N400

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Mfr.Part #
IXTF03N400
Manufacturer
Littelfuse
Package / Case
i4-Pac™-5 (3 Leads)
Datasheet
Download
Description
MOSFET N-CH 4000V 300MA I4PAC
Stock
10,726
In Stock :
10,726

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Terminations :
3
Configuration :
SINGLE WITH BUILT-IN DIODE
JESD-30 Code :
R-PSIP-T3
Input Capacitance (Ciss) (Max) @ Vds :
435pF @ 25V
Manufacturer :
IXYS Corporation
Power Dissipation-Max (Abs) :
70 W
Number of Elements :
1
Terminal Finish :
TIN SILVER COPPER
Package / Case :
i4-Pac™-5 (3 Leads)
Additional Feature :
UL RECOGNIZED
Power Dissipation :
70W
Pbfree Code :
yes
Package Shape :
RECTANGULAR
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Drain-source On Resistance-Max :
300 Ω
Pulsed Drain Current-Max (IDM) :
0.8A
Power Dissipation (Max) :
70W (Tc)
Rise Time :
16ns
Rds On (Max) @ Id, Vgs :
300 Ω @ 150mA, 10V
Current - Continuous Drain (Id) @ 25°C :
300mA Tc
Continuous Drain Current (ID) :
300mA
Case Connection :
Isolated
Mounting Type :
Through Hole
FET Type :
N-Channel
Package :
Tube
Packaging :
Tube
ECCN Code :
EAR99
Terminal Position :
Single
Fall Time (Typ) :
58 ns
Vgs(th) (Max) @ Id :
4V @ 250µA
Product Status :
Obsolete
Series :
--
Drain to Source Breakdown Voltage :
4kV
Terminal Form :
THROUGH-HOLE
Surface Mount :
No
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Gate Charge (Qg) (Max) @ Vgs :
16.3nC @ 10V
Base Product Number :
IXTF02
JESD-609 Code :
e1
Transistor Application :
SWITCHING
Gate to Source Voltage (Vgs) :
20V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Input Capacitance :
435 pF
Drain to Source Resistance :
300 Ω
Reach Compliance Code :
Compliant
Polarity/Channel Type :
N-Channel
Transistor Element Material :
SILICON
RoHS :
Compliant
Turn-Off Delay Time :
86 ns
FET Feature :
--
Operating Mode :
ENHANCEMENT MODE
Max Power Dissipation :
70 W
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Terminals :
3
DS Breakdown Voltage-Min :
4000 V
Rds On Max :
300 Ω
Operating Temperature :
-55°C~150°C TJ
Drain to Source Voltage (Vdss) :
4000V
Vgs (Max) :
±20V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Drain Current-Max (Abs) (ID) :
0.3A
Pin Count :
3
Published :
2009
RoHS Status :
RoHS Compliant
Power Dissipation-Max :
70W Tc
Mount :
Through Hole
Qualification Status :
Not Qualified
Supplier Device Package :
ISOPLUS i4-PAC™
Datasheets
IXTF03N400
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTF03N400 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Package / Case:i4-Pac™-5 (3 Leads), Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, IXTF03N400 pinout, IXTF03N400 datasheet PDF, IXTF03N400 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTF03N400 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTF03N400


N-Channel Tube 300 Ω @ 150mA, 10V ±20V 435pF @ 25V 16.3nC @ 10V 4000V i4-Pac™-5 (3 Leads)

IXTF03N400 Overview


Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 435pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 300mA amps.In this device, the drain-source breakdown voltage is 4kV and VGS=4kV, so the drain-source breakdown voltage is 4kV in this case.A device can conduct a maximum continuous current of [0.3A] according to its drain current.It is [86 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 0.8A.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 300 Ω.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 4000 V to maintain normal operation.To operate this transistor, you will need a 4000V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXTF03N400 Features


a continuous drain current (ID) of 300mA
a drain-to-source breakdown voltage of 4kV voltage
the turn-off delay time is 86 ns
based on its rated peak drain current 0.8A.
single MOSFETs transistor is 300 Ω
a 4000V drain to source voltage (Vdss)


IXTF03N400 Applications


There are a lot of IXYS
IXTF03N400 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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