IXKN75N60C

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Mfr.Part #
IXKN75N60C
Manufacturer
Littelfuse
Package / Case
SOT-227-4, miniBLOC
Datasheet
Download
Description
MOSFET N-CH 600V 75A SOT-227B
Stock
147
In Stock :
147

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Maximum Operating Temperature :
+ 150 C
Number of Pins :
4
Width :
25.42 mm
Packaging :
Tube
Number of Terminals :
4
Brand :
IXYS
Manufacturer :
IXYS
JESD-30 Code :
R-XUFM-X4
Product :
Power MOSFET Modules
FET Type :
N-Channel
Product Type :
Discrete Semiconductor Modules
Mount :
Chassis Mount, Screw
FET Feature :
Super Junction
Power Dissipation-Max :
560W Tc
Case Connection :
Isolated
Power Dissipation :
560W
Gate Charge (Qg) (Max) @ Vgs :
500nC @ 10V
Reach Compliance Code :
Compliant
Transistor Application :
SWITCHING
DS Breakdown Voltage-Min :
600 V
Vgs(th) (Max) @ Id :
3.9V @ 5mA
Supplier Device Package :
SOT-227B
Drive Voltage (Max Rds On,Min Rds On) :
10V
Mounting Style :
Chassis Mount
RoHS Status :
ROHS3 Compliant
Published :
2008
Factory Lead Time :
28 Weeks
Mounting Type :
Chassis Mount
Transistor Polarity :
N-Channel
Length :
38.23 mm
Product Category :
Discrete Semiconductor Modules
Product Status :
Active
Resistance :
36mOhm
Lead Free :
Lead Free
Pin Count :
3
Rds On (Max) @ Id, Vgs :
36m Ω @ 50A, 10V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Minimum Operating Temperature :
- 55 C
Terminal Finish :
Nickel (Ni)
Vf - Forward Voltage :
0.9 V
Tradename :
CoolMOS
Configuration :
SINGLE WITH BUILT-IN DIODE
Turn-Off Delay Time :
110 ns
Power Dissipation (Max) :
560W (Tc)
Base Product Number :
IXKN75
Package / Case :
SOT-227-4, miniBLOC
Avalanche Energy Rating (Eas) :
1800 mJ
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Number of Terminations :
4
Pulsed Drain Current-Max (IDM) :
250A
Continuous Drain Current Id :
75A
Transistor Element Material :
SILICON
Polarity/Channel Type :
N-Channel
Surface Mount :
No
Package :
Tube
Vgs (Max) :
±20V
Qualification Status :
Not Qualified
Package Shape :
RECTANGULAR
Operating Mode :
ENHANCEMENT MODE
Additional Feature :
AVALANCHE RATED
Number of Channels :
1 Channel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current - Continuous Drain (Id) @ 25°C :
75A Tc
Terminal Form :
UNSPECIFIED
Drain-source On Resistance-Max :
0.036 Ω
Fall Time (Typ) :
10 ns
RoHS :
Details
Series :
CoolMOS™
Operating Temperature :
-40°C~150°C TJ
Radiation Hardening :
No
Gate to Source Voltage (Vgs) :
20V
Terminal Position :
UPPER
Continuous Drain Current (ID) :
75A
Height :
12.22 mm
Drain to Source Breakdown Voltage :
600V
Channel Type :
N Channel
Drain Current-Max (Abs) (ID) :
75 A
Drain to Source Voltage (Vdss) :
600V
Rise Time :
30ns
Pbfree Code :
yes
Type :
CoolMOS Power MOSFET
Number of Elements :
1
Datasheets
IXKN75N60C
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXKN75N60C from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:4, Mounting Type:Chassis Mount, Package / Case:SOT-227-4, miniBLOC, Number of Terminations:4, Number of Channels:1 Channel, Operating Temperature:-40°C~150°C TJ, Type:CoolMOS Power MOSFET, IXKN75N60C pinout, IXKN75N60C datasheet PDF, IXKN75N60C amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXKN75N60C ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXKN75N60C


N-Channel Tube 36m Ω @ 50A, 10V ±20V 500nC @ 10V 600V SOT-227-4, miniBLOC

IXKN75N60C Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1800 mJ.This device's continuous drain current (ID) is 75A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 600V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 75 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 110 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 250A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 600 V.This transistor requires a 600V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXKN75N60C Features


the avalanche energy rating (Eas) is 1800 mJ
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 110 ns
based on its rated peak drain current 250A.
a 600V drain to source voltage (Vdss)


IXKN75N60C Applications


There are a lot of IXYS
IXKN75N60C applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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