IXKN75N60C
- Mfr.Part #
- IXKN75N60C
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 75A SOT-227B
- Stock
- 147
- In Stock :
- 147
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Maximum Operating Temperature :
- + 150 C
- Number of Pins :
- 4
- Width :
- 25.42 mm
- Packaging :
- Tube
- Number of Terminals :
- 4
- Brand :
- IXYS
- Manufacturer :
- IXYS
- JESD-30 Code :
- R-XUFM-X4
- Product :
- Power MOSFET Modules
- FET Type :
- N-Channel
- Product Type :
- Discrete Semiconductor Modules
- Mount :
- Chassis Mount, Screw
- FET Feature :
- Super Junction
- Power Dissipation-Max :
- 560W Tc
- Case Connection :
- Isolated
- Power Dissipation :
- 560W
- Gate Charge (Qg) (Max) @ Vgs :
- 500nC @ 10V
- Reach Compliance Code :
- Compliant
- Transistor Application :
- SWITCHING
- DS Breakdown Voltage-Min :
- 600 V
- Vgs(th) (Max) @ Id :
- 3.9V @ 5mA
- Supplier Device Package :
- SOT-227B
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mounting Style :
- Chassis Mount
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2008
- Factory Lead Time :
- 28 Weeks
- Mounting Type :
- Chassis Mount
- Transistor Polarity :
- N-Channel
- Length :
- 38.23 mm
- Product Category :
- Discrete Semiconductor Modules
- Product Status :
- Active
- Resistance :
- 36mOhm
- Lead Free :
- Lead Free
- Pin Count :
- 3
- Rds On (Max) @ Id, Vgs :
- 36m Ω @ 50A, 10V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Minimum Operating Temperature :
- - 55 C
- Terminal Finish :
- Nickel (Ni)
- Vf - Forward Voltage :
- 0.9 V
- Tradename :
- CoolMOS
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Turn-Off Delay Time :
- 110 ns
- Power Dissipation (Max) :
- 560W (Tc)
- Base Product Number :
- IXKN75
- Package / Case :
- SOT-227-4, miniBLOC
- Avalanche Energy Rating (Eas) :
- 1800 mJ
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Terminations :
- 4
- Pulsed Drain Current-Max (IDM) :
- 250A
- Continuous Drain Current Id :
- 75A
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- N-Channel
- Surface Mount :
- No
- Package :
- Tube
- Vgs (Max) :
- ±20V
- Qualification Status :
- Not Qualified
- Package Shape :
- RECTANGULAR
- Operating Mode :
- ENHANCEMENT MODE
- Additional Feature :
- AVALANCHE RATED
- Number of Channels :
- 1 Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 75A Tc
- Terminal Form :
- UNSPECIFIED
- Drain-source On Resistance-Max :
- 0.036 Ω
- Fall Time (Typ) :
- 10 ns
- RoHS :
- Details
- Series :
- CoolMOS™
- Operating Temperature :
- -40°C~150°C TJ
- Radiation Hardening :
- No
- Gate to Source Voltage (Vgs) :
- 20V
- Terminal Position :
- UPPER
- Continuous Drain Current (ID) :
- 75A
- Height :
- 12.22 mm
- Drain to Source Breakdown Voltage :
- 600V
- Channel Type :
- N Channel
- Drain Current-Max (Abs) (ID) :
- 75 A
- Drain to Source Voltage (Vdss) :
- 600V
- Rise Time :
- 30ns
- Pbfree Code :
- yes
- Type :
- CoolMOS Power MOSFET
- Number of Elements :
- 1
- Datasheets
- IXKN75N60C

N-Channel Tube 36m Ω @ 50A, 10V ±20V 500nC @ 10V 600V SOT-227-4, miniBLOC
IXKN75N60C Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1800 mJ.This device's continuous drain current (ID) is 75A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 600V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 75 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 110 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 250A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 600 V.This transistor requires a 600V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXKN75N60C Features
the avalanche energy rating (Eas) is 1800 mJ
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 110 ns
based on its rated peak drain current 250A.
a 600V drain to source voltage (Vdss)
IXKN75N60C Applications
There are a lot of IXYS
IXKN75N60C applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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