IXKN45N80C

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Mfr.Part #
IXKN45N80C
Manufacturer
Littelfuse
Package / Case
SOT-227-4, miniBLOC
Datasheet
Download
Description
MOSFET N-CH 800V 44A SOT-227B
Stock
16,735
In Stock :
16,735

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Drain Current-Max (Abs) (ID) :
44 A
Manufacturer :
IXYS
Rds On (Max) @ Id, Vgs :
74m Ω @ 44A, 10V
Power Dissipation :
380W
Product :
Power MOSFET Modules
Height :
12.22 mm
Drain to Source Breakdown Voltage :
800V
FET Type :
N-Channel
Drain-source On Resistance-Max :
0.074 Ω
Mount :
Chassis Mount
Additional Feature :
UL RECOGNIZED, AVALANCHE RATED
Length :
38.23 mm
Surface Mount :
No
DS Breakdown Voltage-Min :
800 V
Factory Lead Time :
28 Weeks
Power Dissipation (Max) :
380W (Tc)
Packaging :
Tube
Continuous Drain Current (ID) :
44A
Published :
2008
Drain to Source Voltage (Vdss) :
800V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Rise Time :
15ns
Product Category :
Discrete Semiconductor Modules
Fall Time (Typ) :
10 ns
Vgs (Max) :
±20V
Qualification Status :
Not Qualified
Transistor Element Material :
SILICON
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Number of Terminations :
4
RoHS :
Details
Operating Mode :
ENHANCEMENT MODE
Terminal Finish :
Nickel (Ni)
Gate to Source Voltage (Vgs) :
20V
Transistor Polarity :
N-Channel
Base Product Number :
IXKN45
Gate Charge (Qg) (Max) @ Vgs :
360nC @ 10V
Lead Free :
Lead Free
Package Shape :
RECTANGULAR
Pin Count :
4
Number of Channels :
1 Channel
Package / Case :
SOT-227-4, miniBLOC
Configuration :
SINGLE WITH BUILT-IN DIODE
Terminal Form :
UNSPECIFIED
Pbfree Code :
yes
Minimum Operating Temperature :
- 55 C
Maximum Operating Temperature :
+ 150 C
Product Status :
Active
Operating Temperature :
-55°C~150°C TJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Avalanche Energy Rating (Eas) :
670 mJ
Vgs(th) (Max) @ Id :
3.9V @ 4mA
Current - Continuous Drain (Id) @ 25°C :
44A Tc
Number of Elements :
1
JESD-30 Code :
R-PUFM-X4
Number of Pins :
4
Transistor Application :
SWITCHING
Polarity/Channel Type :
N-Channel
Number of Terminals :
4
Drive Voltage (Max Rds On,Min Rds On) :
10V
Mounting Type :
Chassis Mount
Power Dissipation-Max :
380W Tc
Product Type :
Discrete Semiconductor Modules
Brand :
IXYS
Case Connection :
Isolated
Terminal Position :
UPPER
FET Feature :
Super Junction
Tradename :
CoolMOS
Reach Compliance Code :
Compliant
Vf - Forward Voltage :
0.9 V
Type :
CoolMOS Power MOSFET
Mounting Style :
Chassis Mount
Turn-Off Delay Time :
75 ns
Package :
Tube
RoHS Status :
ROHS3 Compliant
Series :
CoolMOS™
Supplier Device Package :
SOT-227B
Width :
25.42 mm
Datasheets
IXKN45N80C
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXKN45N80C from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:4, Number of Channels:1 Channel, Package / Case:SOT-227-4, miniBLOC, Operating Temperature:-55°C~150°C TJ, Number of Pins:4, Mounting Type:Chassis Mount, Type:CoolMOS Power MOSFET, IXKN45N80C pinout, IXKN45N80C datasheet PDF, IXKN45N80C amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXKN45N80C ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXKN45N80C


N-Channel Tube 74m Ω @ 44A, 10V ±20V 360nC @ 10V 800V SOT-227-4, miniBLOC

IXKN45N80C Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 670 mJ.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 44A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=800V. And this device has 800V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 44 A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 75 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 800 V in order to maintain normal operation.Operating this transistor requires a 800V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXKN45N80C Features


the avalanche energy rating (Eas) is 670 mJ
a continuous drain current (ID) of 44A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 75 ns
a 800V drain to source voltage (Vdss)


IXKN45N80C Applications


There are a lot of IXYS
IXKN45N80C applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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