IXKN45N80C
- Mfr.Part #
- IXKN45N80C
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 44A SOT-227B
- Stock
- 16,735
- In Stock :
- 16,735
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Drain Current-Max (Abs) (ID) :
- 44 A
- Manufacturer :
- IXYS
- Rds On (Max) @ Id, Vgs :
- 74m Ω @ 44A, 10V
- Power Dissipation :
- 380W
- Product :
- Power MOSFET Modules
- Height :
- 12.22 mm
- Drain to Source Breakdown Voltage :
- 800V
- FET Type :
- N-Channel
- Drain-source On Resistance-Max :
- 0.074 Ω
- Mount :
- Chassis Mount
- Additional Feature :
- UL RECOGNIZED, AVALANCHE RATED
- Length :
- 38.23 mm
- Surface Mount :
- No
- DS Breakdown Voltage-Min :
- 800 V
- Factory Lead Time :
- 28 Weeks
- Power Dissipation (Max) :
- 380W (Tc)
- Packaging :
- Tube
- Continuous Drain Current (ID) :
- 44A
- Published :
- 2008
- Drain to Source Voltage (Vdss) :
- 800V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Rise Time :
- 15ns
- Product Category :
- Discrete Semiconductor Modules
- Fall Time (Typ) :
- 10 ns
- Vgs (Max) :
- ±20V
- Qualification Status :
- Not Qualified
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Terminations :
- 4
- RoHS :
- Details
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Finish :
- Nickel (Ni)
- Gate to Source Voltage (Vgs) :
- 20V
- Transistor Polarity :
- N-Channel
- Base Product Number :
- IXKN45
- Gate Charge (Qg) (Max) @ Vgs :
- 360nC @ 10V
- Lead Free :
- Lead Free
- Package Shape :
- RECTANGULAR
- Pin Count :
- 4
- Number of Channels :
- 1 Channel
- Package / Case :
- SOT-227-4, miniBLOC
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Terminal Form :
- UNSPECIFIED
- Pbfree Code :
- yes
- Minimum Operating Temperature :
- - 55 C
- Maximum Operating Temperature :
- + 150 C
- Product Status :
- Active
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Avalanche Energy Rating (Eas) :
- 670 mJ
- Vgs(th) (Max) @ Id :
- 3.9V @ 4mA
- Current - Continuous Drain (Id) @ 25°C :
- 44A Tc
- Number of Elements :
- 1
- JESD-30 Code :
- R-PUFM-X4
- Number of Pins :
- 4
- Transistor Application :
- SWITCHING
- Polarity/Channel Type :
- N-Channel
- Number of Terminals :
- 4
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mounting Type :
- Chassis Mount
- Power Dissipation-Max :
- 380W Tc
- Product Type :
- Discrete Semiconductor Modules
- Brand :
- IXYS
- Case Connection :
- Isolated
- Terminal Position :
- UPPER
- FET Feature :
- Super Junction
- Tradename :
- CoolMOS
- Reach Compliance Code :
- Compliant
- Vf - Forward Voltage :
- 0.9 V
- Type :
- CoolMOS Power MOSFET
- Mounting Style :
- Chassis Mount
- Turn-Off Delay Time :
- 75 ns
- Package :
- Tube
- RoHS Status :
- ROHS3 Compliant
- Series :
- CoolMOS™
- Supplier Device Package :
- SOT-227B
- Width :
- 25.42 mm
- Datasheets
- IXKN45N80C

N-Channel Tube 74m Ω @ 44A, 10V ±20V 360nC @ 10V 800V SOT-227-4, miniBLOC
IXKN45N80C Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 670 mJ.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 44A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=800V. And this device has 800V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 44 A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 75 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 800 V in order to maintain normal operation.Operating this transistor requires a 800V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXKN45N80C Features
the avalanche energy rating (Eas) is 670 mJ
a continuous drain current (ID) of 44A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 75 ns
a 800V drain to source voltage (Vdss)
IXKN45N80C Applications
There are a lot of IXYS
IXKN45N80C applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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