IXKN40N60C
- Mfr.Part #
- IXKN40N60C
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 40A SOT-227B
- Stock
- 41,448
- In Stock :
- 41,448
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain Current-Max (Abs) (ID) :
- 40 A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- DS Breakdown Voltage-Min :
- 600 V
- Polarity/Channel Type :
- N-Channel
- Drain-source On Resistance-Max :
- 0.07Ohm
- Vgs (Max) :
- ±20V
- Width :
- 25.42 mm
- Number of Pins :
- 4
- Terminal Form :
- UNSPECIFIED
- Mounting Type :
- Chassis Mount
- RoHS Status :
- ROHS3 Compliant
- Case Connection :
- Isolated
- Manufacturer :
- IXYS
- Qualification Status :
- Not Qualified
- Number of Elements :
- 1
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Minimum Operating Temperature :
- - 40 C
- Gate to Source Voltage (Vgs) :
- 20V
- Reach Compliance Code :
- Compliant
- Avalanche Energy Rating (Eas) :
- 1800 mJ
- Brand :
- IXYS
- RoHS :
- Details
- Gate Charge (Qg) (Max) @ Vgs :
- 250nC @ 10V
- Package Shape :
- RECTANGULAR
- Power Dissipation :
- 290W
- Series :
- CoolMOS™
- Number of Terminals :
- 4
- Transistor Application :
- SWITCHING
- FET Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 70m Ω @ 500mA, 10V
- Tradename :
- CoolMOS
- Vf - Forward Voltage :
- 0.9 V
- Continuous Drain Current (ID) :
- 40A
- Transistor Element Material :
- SILICON
- Packaging :
- Tube
- Base Product Number :
- IXKN40
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 290W Tc
- Terminal Position :
- UPPER
- Supplier Device Package :
- SOT-227B
- Number of Channels :
- 1 Channel
- Operating Temperature :
- -40°C~150°C TJ
- Number of Terminations :
- 4
- Power Dissipation-Max (Abs) :
- 290 W
- Mounting Style :
- Chassis Mount
- Transistor Polarity :
- N-Channel
- Height :
- 12.22 mm
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- JESD-30 Code :
- R-PUFM-X4
- Product Type :
- Discrete Semiconductor Modules
- Pin Count :
- 4
- Turn-Off Delay Time :
- 110 ns
- Terminal Finish :
- Nickel (Ni)
- Drain to Source Voltage (Vdss) :
- 600V
- Power Dissipation (Max) :
- 290W (Tc)
- Product Category :
- Discrete Semiconductor Modules
- Pbfree Code :
- yes
- Product :
- Power MOSFET Modules
- Product Status :
- Active
- Drain to Source Breakdown Voltage :
- 600V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Type :
- CoolMOS Power MOSFET
- Current - Continuous Drain (Id) @ 25°C :
- 40A Tc
- Mount :
- Chassis Mount
- Factory Lead Time :
- 28 Weeks
- Fall Time (Typ) :
- 10 ns
- Package / Case :
- SOT-227-4, miniBLOC
- Published :
- 2008
- Surface Mount :
- No
- Lead Free :
- Lead Free
- Package :
- Tube
- FET Feature :
- Super Junction
- Operating Mode :
- ENHANCEMENT MODE
- Rise Time :
- 30ns
- Length :
- 38.2 mm
- Maximum Operating Temperature :
- + 150 C
- Vgs(th) (Max) @ Id :
- 3.9V @ 2.5mA
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Datasheets
- IXKN40N60C

N-Channel Tube 70m Ω @ 500mA, 10V ±20V 250nC @ 10V 600V SOT-227-4, miniBLOC
IXKN40N60C Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1800 mJ.This device's continuous drain current (ID) is 40A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 600V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 40 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 110 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 600 V.This transistor requires a 600V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXKN40N60C Features
the avalanche energy rating (Eas) is 1800 mJ
a continuous drain current (ID) of 40A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 110 ns
a 600V drain to source voltage (Vdss)
IXKN40N60C Applications
There are a lot of IXYS
IXKN40N60C applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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