IXKN40N60C

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Mfr.Part #
IXKN40N60C
Manufacturer
Littelfuse
Package / Case
SOT-227-4, miniBLOC
Datasheet
Download
Description
MOSFET N-CH 600V 40A SOT-227B
Stock
41,448
In Stock :
41,448

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Drain Current-Max (Abs) (ID) :
40 A
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
DS Breakdown Voltage-Min :
600 V
Polarity/Channel Type :
N-Channel
Drain-source On Resistance-Max :
0.07Ohm
Vgs (Max) :
±20V
Width :
25.42 mm
Number of Pins :
4
Terminal Form :
UNSPECIFIED
Mounting Type :
Chassis Mount
RoHS Status :
ROHS3 Compliant
Case Connection :
Isolated
Manufacturer :
IXYS
Qualification Status :
Not Qualified
Number of Elements :
1
Configuration :
SINGLE WITH BUILT-IN DIODE
Minimum Operating Temperature :
- 40 C
Gate to Source Voltage (Vgs) :
20V
Reach Compliance Code :
Compliant
Avalanche Energy Rating (Eas) :
1800 mJ
Brand :
IXYS
RoHS :
Details
Gate Charge (Qg) (Max) @ Vgs :
250nC @ 10V
Package Shape :
RECTANGULAR
Power Dissipation :
290W
Series :
CoolMOS™
Number of Terminals :
4
Transistor Application :
SWITCHING
FET Type :
N-Channel
Rds On (Max) @ Id, Vgs :
70m Ω @ 500mA, 10V
Tradename :
CoolMOS
Vf - Forward Voltage :
0.9 V
Continuous Drain Current (ID) :
40A
Transistor Element Material :
SILICON
Packaging :
Tube
Base Product Number :
IXKN40
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation-Max :
290W Tc
Terminal Position :
UPPER
Supplier Device Package :
SOT-227B
Number of Channels :
1 Channel
Operating Temperature :
-40°C~150°C TJ
Number of Terminations :
4
Power Dissipation-Max (Abs) :
290 W
Mounting Style :
Chassis Mount
Transistor Polarity :
N-Channel
Height :
12.22 mm
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Additional Feature :
AVALANCHE RATED, UL RECOGNIZED
JESD-30 Code :
R-PUFM-X4
Product Type :
Discrete Semiconductor Modules
Pin Count :
4
Turn-Off Delay Time :
110 ns
Terminal Finish :
Nickel (Ni)
Drain to Source Voltage (Vdss) :
600V
Power Dissipation (Max) :
290W (Tc)
Product Category :
Discrete Semiconductor Modules
Pbfree Code :
yes
Product :
Power MOSFET Modules
Product Status :
Active
Drain to Source Breakdown Voltage :
600V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Type :
CoolMOS Power MOSFET
Current - Continuous Drain (Id) @ 25°C :
40A Tc
Mount :
Chassis Mount
Factory Lead Time :
28 Weeks
Fall Time (Typ) :
10 ns
Package / Case :
SOT-227-4, miniBLOC
Published :
2008
Surface Mount :
No
Lead Free :
Lead Free
Package :
Tube
FET Feature :
Super Junction
Operating Mode :
ENHANCEMENT MODE
Rise Time :
30ns
Length :
38.2 mm
Maximum Operating Temperature :
+ 150 C
Vgs(th) (Max) @ Id :
3.9V @ 2.5mA
Drive Voltage (Max Rds On,Min Rds On) :
10V
Datasheets
IXKN40N60C
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXKN40N60C from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:4, Mounting Type:Chassis Mount, Number of Channels:1 Channel, Operating Temperature:-40°C~150°C TJ, Number of Terminations:4, Type:CoolMOS Power MOSFET, Package / Case:SOT-227-4, miniBLOC, IXKN40N60C pinout, IXKN40N60C datasheet PDF, IXKN40N60C amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXKN40N60C ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXKN40N60C


N-Channel Tube 70m Ω @ 500mA, 10V ±20V 250nC @ 10V 600V SOT-227-4, miniBLOC

IXKN40N60C Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1800 mJ.This device's continuous drain current (ID) is 40A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 600V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 40 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 110 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 600 V.This transistor requires a 600V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXKN40N60C Features


the avalanche energy rating (Eas) is 1800 mJ
a continuous drain current (ID) of 40A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 110 ns
a 600V drain to source voltage (Vdss)


IXKN40N60C Applications


There are a lot of IXYS
IXKN40N60C applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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