IXGR72N60C3D1

Manufacturer :

Littelfuse

Product Category :

Transistors - IGBTs - Single

Package :

Tube

Surface Mount :

No

Package / Case :

ISOPLUS247™

Number of Elements :

1

Collector Current-Max (IC) :

75 A

Supplier Device Package :

ISOPLUS247™

Pbfree Code :

yes

Terminal Form :

THROUGH-HOLE

Td (on/off) @ 25°C :

27ns/77ns

Package Shape :

RECTANGULAR

Fall Time-Max (tf) :

110ns

Collector Emitter Voltage (VCEO) :

2.7V

Turn Off Time-Nom (toff) :

244 ns

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Switching Energy :

1.03mJ (on), 480μJ (off)

Packaging :

Tube

Power Dissipation :

200W

Reverse Recovery Time (trr) :

35ns

Gate-Emitter Voltage-Max :

20V

Collector-Emitter Voltage-Max :

600 V

Manufacturer :

IXYS Corporation

Polarity/Channel Type :

N-Channel

Transistor Element Material :

SILICON

Base Part Number :

IXG*72N60

JESD-30 Code :

R-PSFM-T3

Max Power Dissipation :

200W

Terminal Finish :

TIN SILVER COPPER

Mount :

Through Hole

JESD-609 Code :

e1

Power Dissipation-Max (Abs) :

200 W

Qualification Status :

Not Qualified

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Collector Pulsed (Icm) :

400A

Case Connection :

Isolated

Max Collector Current :

75A

Test Condition :

480V, 50A, 2 Ω, 15V

Reverse Recovery Time :

35ns

Collector Emitter Saturation Voltage :

2.1V

Factory Lead Time :

30 Weeks

Reach Compliance Code :

Unknown

Pin Count :

3

Base Product Number :

IXGR72

Vce(on) (Max) @ Vge, Ic :

2.7V @ 15V, 50A

Terminal Position :

Single

Power - Max :

200W

Transistor Application :

POWER CONTROL

Product Status :

Obsolete

Turn On Time :

62 ns

Number of Terminals :

3

Mounting Type :

Through Hole

IGBT Type :

PT

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Gate Charge :

175nC

Input Type :

Standard

Series :

GenX3™

Current - Collector (Ic) (Max) :

75A

Voltage - Collector Emitter Breakdown (Max) :

600V

Published :

2009

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate-Emitter Thr Voltage-Max :

5.5V

Collector Emitter Breakdown Voltage :

600V

Configuration :

SINGLE WITH BUILT-IN DIODE