IXGR35N120B

Manufacturer :

Littelfuse

Product Category :

Transistors - IGBTs - Single

JESD-30 Code :

R-PSIP-T3

Power Dissipation :

200W

Collector Emitter Voltage (VCEO) :

1.2kV

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Through Hole

Rise Time :

160ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Polarity/Channel Type :

N-Channel

Terminal Form :

THROUGH-HOLE

Power - Max :

200W

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Finish :

TIN SILVER COPPER

Factory Lead Time :

8 Weeks

Number of Terminations :

3

Max Collector Current :

70A

Collector Current-Max (IC) :

70 A

Packaging :

Tube

Pin Count :

3

Configuration :

Single

Package Shape :

RECTANGULAR

Pbfree Code :

yes

REACH SVHC :

No SVHC

Number of Elements :

1

Collector Emitter Saturation Voltage :

3.3V

Product Status :

Active

Base Part Number :

IXG*35N120

Qualification Status :

Not Qualified

Terminal Position :

Single

Series :

HiPerFAST™

Operating Temperature :

-55°C~150°C TJ

Surface Mount :

No

Input Type :

Standard

Collector Emitter Breakdown Voltage :

1.2kV

Gate Charge :

170nC

Turn On Time :

86 ns

Gate-Emitter Thr Voltage-Max :

5V

Base Product Number :

IXGR35

ECCN Code :

EAR99

Reach Compliance Code :

Unknown

Published :

2001

RoHS :

Compliant

Package / Case :

ISOPLUS247™

Polarity :

NPN

Collector-Emitter Voltage-Max :

1200 V

Voltage - Collector Emitter Breakdown (Max) :

1200V

Case Connection :

Isolated

Package :

Tube

Mounting Type :

Through Hole

Td (on/off) @ 25°C :

50ns/180ns

Turn Off Time-Nom (toff) :

660 ns

Transistor Application :

POWER CONTROL

Element Configuration :

Single

Supplier Device Package :

ISOPLUS247™

Number of Terminals :

3

Min Operating Temperature :

-55 °C

Vce(on) (Max) @ Vge, Ic :

3.3V @ 15V, 35A

Current - Collector (Ic) (Max) :

70A

Gate-Emitter Voltage-Max :

20V

JESD-609 Code :

e1

IGBT Type :

PT

Manufacturer :

IXYS Corporation

RoHS Status :

ROHS3 Compliant

Switching Energy :

3.8mJ (off)

Power Dissipation-Max (Abs) :

200 W

Transistor Element Material :

SILICON

Max Power Dissipation :

200W

Current - Collector Pulsed (Icm) :

140A

Max Operating Temperature :

150 °C

Test Condition :

960V, 35A, 4.7 Ω, 15V

Number of Pins :

3