IXGM40N60A
- Mfr.Part #
- IXGM40N60A
- Manufacturer
- Littelfuse
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- IGBT MODULE 600V 75A 250W TO204
- Stock
- 8,869
- In Stock :
- 8,869
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - IGBTs - Modules
- Transistor Element Material :
- SILICON
- Product Status :
- Obsolete
- Number of Elements :
- 1
- Current Rating :
- 75A
- Voltage - Collector Emitter Breakdown (Max) :
- 600V
- VCEsat-Max :
- 3 V
- Number of Pins :
- 3
- RoHS Status :
- RoHS Compliant
- Input Capacitance :
- 4.5nF
- Package Shape :
- Round
- Polarity/Channel Type :
- N-Channel
- Input Capacitance (Cies) @ Vce :
- 4.5nF @ 25V
- Power Dissipation Ambient-Max :
- 250 W
- Turn Off Time-Nom (toff) :
- 900 ns
- Power - Max :
- 250W
- Supplier Device Package :
- TO-204
- Mount :
- Chassis Mount, Through Hole
- Current - Collector (Ic) (Max) :
- 75A
- Voltage - Rated DC :
- 600V
- Qualification Status :
- Not Qualified
- Collector Current-Max (IC) :
- 75 A
- JESD-30 Code :
- O-MBFM-P2
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Application :
- POWER CONTROL
- Lead Free :
- Lead Free
- Mounting Type :
- Chassis Mount
- Vce(on) (Max) @ Vge, Ic :
- 3V @ 15V, 40A
- Current - Collector Cutoff (Max) :
- 200μA
- Power Dissipation-Max (Abs) :
- 250 W
- Terminal Position :
- BOTTOM
- JEDEC-95 Code :
- TO-204AE
- Number of Terminations :
- 2
- Manufacturer :
- IXYS
- Series :
- --
- Turn On Time :
- 300 ns
- Operating Temperature :
- -55°C~150°C TJ
- Surface Mount :
- No
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Input :
- Standard
- Published :
- 1997
- Terminal Form :
- PIN/PEG
- Additional Feature :
- High Speed
- Collector Emitter Breakdown Voltage :
- 600V
- Packaging :
- Bulk
- Number of Terminals :
- 2
- Collector-Emitter Voltage-Max :
- 600 V
- IGBT Type :
- --
- Max Collector Current :
- 75A
- Gate-Emitter Voltage-Max :
- 20V
- Package / Case :
- TO-204AA, TO-3
- Base Part Number :
- IXG*40N60
- Configuration :
- Single
- Case Connection :
- COLLECTOR
- Pbfree Code :
- yes
- Rise Time :
- 200ns
- Max Power Dissipation :
- 250W
- Gate-Emitter Thr Voltage-Max :
- 5V
- Collector Emitter Voltage (VCEO) :
- 600V
- Reach Compliance Code :
- Compliant
- Base Product Number :
- IXGM40
- NTC Thermistor :
- No
- Datasheets
- IXGM40N60A

IXGM40N60A datasheet pdf and Transistors - IGBTs - Modules product details from IXYS stock available at
IXGM40N60A Description
IXGM40N60A is an Insulated-gate bipolar transistor. An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily
forming an electronic switch. It was developed to combine high efficiency with fast switching. It consists of four alternating layers (P–N–P–N) that are
controlled by a metal–oxide–semiconductor (MOS) gate structure. Since it is designed to turn on and off rapidly, the IGBT can synthesize complex
waveforms with pulse-width modulation and low-pass filters, thus it is also used in switching amplifiers in sound systems and industrial control systems.
IXGM40N60A Features
International standard packages
2nd generation HDMOSTM process
Low VCE(sat) - for low on-state conduction losses
High current handling capability
MOS Gate turn-on - drive simplicity
Voltage rating guaranteed at high temperature (125°C)
IXGM40N60A Applications
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode power supplies
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