IXGB75N60BD1
- Mfr.Part #
- IXGB75N60BD1
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- IGBT 600V 120A 360W PLUS264
- Stock
- 24,286
- In Stock :
- 24,286
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - IGBTs - Single
- Operating Temperature :
- -55°C~150°C TJ
- Current - Collector (Ic) (Max) :
- 120A
- RoHS :
- Compliant
- Max Operating Temperature :
- 150 °C
- Gate-Emitter Voltage-Max :
- 20V
- Reach Compliance Code :
- Compliant
- Number of Elements :
- 1
- Package Shape :
- RECTANGULAR
- Max Power Dissipation :
- 360W
- Mount :
- Through Hole
- Power - Max :
- 360W
- Product Status :
- Obsolete
- Number of Pins :
- 3
- Reverse Recovery Time (trr) :
- 50ns
- Reverse Recovery Time :
- 50ns
- Vce(on) (Max) @ Vge, Ic :
- 2.3V @ 15V, 75A
- Packaging :
- Tube
- Mounting Type :
- Through Hole
- Switching Energy :
- 3.3mJ (off)
- Supplier Device Package :
- PLUS264™
- Base Product Number :
- IXGB75
- Turn On Time :
- 133 ns
- Series :
- HiPerFAST™
- Voltage - Collector Emitter Breakdown (Max) :
- 600V
- Terminal Form :
- THROUGH-HOLE
- Test Condition :
- 480V, 75A, 5 Ω, 15V
- Package :
- Tube
- Transistor Application :
- POWER CONTROL
- RoHS Status :
- RoHS Compliant
- Package / Case :
- TO-264-3, TO-264AA
- Collector Emitter Breakdown Voltage :
- 600V
- IGBT Type :
- --
- Number of Terminations :
- 3
- Input Type :
- Standard
- Collector Emitter Voltage (VCEO) :
- 600V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Gate Charge :
- 248nC
- Polarity/Channel Type :
- N-Channel
- Number of Terminals :
- 3
- Min Operating Temperature :
- -55 °C
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Qualification Status :
- Not Qualified
- Transistor Element Material :
- SILICON
- Gate-Emitter Thr Voltage-Max :
- 5.5V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Surface Mount :
- No
- Element Configuration :
- Single
- Case Connection :
- COLLECTOR
- Current - Collector Pulsed (Icm) :
- 300A
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Td (on/off) @ 25°C :
- 62ns/220ns
- JESD-30 Code :
- R-PSFM-T3
- JESD-609 Code :
- e1
- Turn Off Time-Nom (toff) :
- 600 ns
- Terminal Position :
- Single
- Collector Current-Max (IC) :
- 75 A
- Power Dissipation-Max (Abs) :
- 360 W
- Collector-Emitter Voltage-Max :
- 600 V
- Pin Count :
- 3
- Pbfree Code :
- yes
- Published :
- 2002
- Max Collector Current :
- 120A
- Manufacturer :
- IXYS Corporation
- Datasheets
- IXGB75N60BD1

IXGB75N60BD1 datasheet pdf and Transistors - IGBTs - Single product details from IXYS stock available at
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