IXGB200N60B3
- Mfr.Part #
- IXGB200N60B3
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- IGBT 600V 75A 1250W PLUS264
- Stock
- 15,860
- In Stock :
- 15,860
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - IGBTs - Single
- Collector Emitter Breakdown Voltage :
- 600V
- Polarity/Channel Type :
- N-Channel
- Transistor Application :
- POWER CONTROL
- Mounting Type :
- Through Hole
- Supplier Device Package :
- PLUS264™
- Number of Terminations :
- 3
- Base Part Number :
- IXG*200N60
- Fall Time-Max (tf) :
- 300ns
- Surface Mount :
- No
- Max Collector Current :
- 75A
- Voltage - Collector Emitter Breakdown (Max) :
- 600V
- Terminal Form :
- THROUGH-HOLE
- Vce(on) (Max) @ Vge, Ic :
- 1.5V @ 15V, 100A
- Collector Emitter Saturation Voltage :
- 1.35V
- Package / Case :
- TO-264-3, TO-264AA
- Turn On Time :
- 122 ns
- Pbfree Code :
- yes
- Gate Charge :
- 750nC
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Base Product Number :
- IXGB200
- Number of Elements :
- 1
- Series :
- GenX3™
- Manufacturer :
- IXYS Corporation
- Transistor Element Material :
- SILICON
- Min Operating Temperature :
- -55 °C
- JESD-30 Code :
- R-PSIP-T3
- Package :
- Tube
- RoHS Status :
- ROHS3 Compliant
- Case Connection :
- COLLECTOR
- Operating Temperature :
- -55°C~150°C TJ
- Mount :
- Through Hole
- Switching Energy :
- 1.6mJ (on), 2.9mJ (off)
- Input Type :
- Standard
- Product Status :
- Obsolete
- JESD-609 Code :
- e1
- Gate-Emitter Thr Voltage-Max :
- 5V
- Package Shape :
- RECTANGULAR
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Packaging :
- Tube
- Power Dissipation-Max (Abs) :
- 1250 W
- Td (on/off) @ 25°C :
- 44ns/310ns
- Factory Lead Time :
- 26 Weeks
- Test Condition :
- 300V, 100A, 1 Ω, 15V
- IGBT Type :
- PT
- Max Power Dissipation :
- 1.25kW
- Qualification Status :
- Not Qualified
- Power Dissipation :
- 1.25kW
- Pin Count :
- 3
- Turn Off Time-Nom (toff) :
- 730 ns
- Terminal Position :
- Single
- Collector Emitter Voltage (VCEO) :
- 1.5V
- Max Operating Temperature :
- 150 °C
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector (Ic) (Max) :
- 75A
- Number of Terminals :
- 3
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Gate-Emitter Voltage-Max :
- 20V
- Power - Max :
- 1250W
- Reach Compliance Code :
- Compliant
- Collector Current-Max (IC) :
- 75 A
- Current - Collector Pulsed (Icm) :
- 600A
- Published :
- 2008
- Configuration :
- Single
- RoHS :
- Compliant
- Collector-Emitter Voltage-Max :
- 600 V
- Datasheets
- IXGB200N60B3

IXGB200N60B3 datasheet pdf and Transistors - IGBTs - Single product details from IXYS stock available at
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| IXGB75N60BD1 | Littelfuse | 24,286 | IGBT 600V 120A 360W PLUS264 |
















