IXFQ28N60P3

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Polarity :

N-Channel

Published :

2011

Continuous Drain Current (ID) :

28A

Configuration :

Single

Supplier Device Package :

TO-3P

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tube

RoHS :

Details

Terminal Form :

THROUGH-HOLE

Turn On Delay Time :

27 ns

Case Connection :

DRAIN

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Minimum Operating Temperature :

-55 °C

Mounting Style :

Through Hole

Mounting Type :

Through Hole

Drain to Source Voltage (Vdss) :

600V

Turn-Off Delay Time :

48 ns

Product Type :

MOSFET

Number of Terminals :

3

Product Category :

MOSFET

Qualification Status :

Not Qualified

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

260m Ω @ 14A, 10V

ECCN Code :

EAR99

Channel Mode :

Enhancement

Drain Current-Max (Abs) (ID) :

28 A

Maximum Operating Temperature :

+150 °C

Number of Elements per Chip :

1

Transistor Element Material :

SILICON

Package Shape :

RECTANGULAR

Number of Channels :

1 Channel

Tradename :

HiPerFET

Manufacturer :

IXYS

Power Dissipation-Max (Abs) :

695 W

Drain-source On Resistance-Max :

0.26Ohm

RoHS Status :

ROHS3 Compliant

Qualification :

-

Pin Count :

3

Pulsed Drain Current-Max (IDM) :

70A

Base Product Number :

IXFQ28

Rise Time :

18ns

Power Dissipation (Max) :

695W (Tc)

Number of Elements :

1

Brand :

IXYS

Additional Feature :

AVALANCHE RATED

Transistor Application :

SWITCHING

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

Reach Compliance Code :

Compliant

Polarity/Channel Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 10V

Series :

HiPerFET™, Polar3™

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

600V

Surface Mount :

No

Number of Terminations :

3

Package :

Tube

Fall Time (Typ) :

19 ns

Transistor Type :

1 N-Channel

Package / Case :

TO-3P-3, SC-65-3

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Height :

20.3mm

JESD-30 Code :

R-PSFM-T3

Length :

15.8mm

Number of Pins :

3

Width :

4.9mm

Power Dissipation :

695W

Package Type :

TO-3PN

DS Breakdown Voltage-Min :

600 V

Vgs (Max) :

±30V

Continuous Drain Current Id :

28A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate to Source Voltage (Vgs) :

30V

Product Status :

Active

Input Capacitance (Ciss) (Max) @ Vds :

3560pF @ 25V

Channel Type :

N Channel

Element Configuration :

Single

Factory Lead Time :

26 Weeks

Mount :

Through Hole

MSL :

MSL 1 - Unlimited

Avalanche Energy Rating (Eas) :

500 mJ

FET Feature :

--

Current - Continuous Drain (Id) @ 25°C :

28A Tc

Power Dissipation-Max :

695W Tc